Organisation
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Aktivitäten
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Kontakt |
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Angebote für Studenten |
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Bereiche im Nanotechnikum |
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Martin-Luther-Universität
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4, D-06120 Halle, Germany
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| G. Dlubek, V. Bondarenko, I. Y. Al-Qaradawi, D. Kilburn, R. Krause-Rehberg The structure of the free volume in poly(styrene-co-acrylonitrile) from positron lifetime and pressure vvolume temperature (PVT) experiments II. Local free volume from positron annihilation lifetime spectroscopy (PALS) Macromol. Chem. Phys. 205 (2004), 512-522 |
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| N. Yu. Arutyunov, R. Krause-Rehberg Atomic environment of positrons annihilating in different parts of Cz-Si single crystal Solid State Phen. 95-96 (2004), 507-512 |
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| V. Bondarenko, R. Krause-Rehberg, H. Feick, C. Davia Defects in FZ-silicon after neutron irradiation - A positron annihilation and photoluminescence study J. Mater. Sci. 39 (2004), 919-923 |
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| V. Bondarenko, J. Gebauer, F. Redmann, R. Krause-Rehberg Vacancy formation in GaAs under different equilibrium conditions Mater. Sci. Forum 445-446 (2004), 54-56 |
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| R. Krause-Rehberg, V. Bondarenko, J. P?pping, N. A. Stolwijk, T. E. M. Staab, U. S?dervall Observation of vacancies during Zn diffusion in GaP Mater. Sci. Forum 445-446 (2004), 26-30 |
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| M.Hanke, H.Raidt, R.K?hler, H.Wawra Island chain formation during liquid phase epitaxy of SiGe on silicon Appl. Phys.Lett. 83, 24 (2003), 4927-4929 |
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| Hartmut S. Leipner (Ed.) Innovationsforum Nanostrukturierte Materialien Martin-Luther-Universität Halle-Wittenberg (2003), |
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| H. Lei Effect of point defects and dislocations on electrical and optical properties of III-V semiconductors Dissertation (2003), |
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| D. Böschel, M. Janich, H. Roggendorf Size distribution of colloidal silica in sodium silicate solutions investigated by dynamic light scattering and viscosity measurements J. Colloid Interface Sci. 267, 2 (2003), 360-368 |
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| H. S. Leipner, V. V. Mikhnovich, V. Bondarenko, Z. Wang. H. Gu, R. Krause-Rehberg, J.-L. Demenet, J. Rabier Positron annihilation of defects in silicon deformed at different temperatures Physica B 340-342 (2003), 617-621 |
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