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Bereiche im
Nanotechnikum |
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Martin-Luther-Universität
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4, D-06120 Halle, Germany
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 | R. Krause-Rehberg, H. S. Leipner
Determination of absolute vacancy concentrations in semiconductors by means of positron annihilation
Appl. Phys. A 64 (1997), 457-466 |
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H. S. Leipner, C. H?bner, R. Krause-Rehberg
Study of plastically deformed semiconductors by means of positron annihilation
Mater. Sci. Forum 258-263 (1997), 981-986 |
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Abicht H.-P., V?ltzke D., R?der A., Schneider R., Woltersdorf J.
The influence of the milling liquid on the properties of barium titanate ceramics
J. Mat. Chem. 7(3) (1997), 487-492 |
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H. S. Leipner, R. Scholz, F. Syrowatka, P. Werner, K. D. Schicke, J. Schreiber
Copper diffusion in plastically deformed GaAs
Inst. Phys. Conf. Ser. 160 (1997), 87-90 |
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M. Procop, A. R?der
An interlaboratory comparision of energy dispersive x-ray microanalysis (EDX) of titanium and zirkonium nitrides
Mikrochimica Acta 125 (1997), 33-39 |
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Schneider R., Woltersdorf J., R?der A.
EELS Nanoanalysis for Investigation Both Chemical Composition and Bonding of Interlayers in Composites
Mikrochimica Acta 125 (1997), 361-365 |
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| W. Leitenberger, C. Eisenschmidt, H.-R. H?che
Lithium fluoride transmission phase retarder for X-rays
J. Appl. Cryst. 30 (1997), 164-170 |
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| E. A. Steinman, H. S. Leipner, H. G. Grimmeiss
The magnesium related luminescence in silicon and its quenching due to the presence of dislocations
Sol. State Phen. 57-58 (1997), 313-318 |
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C. H?bner, H. S. Leipner, R. Krause-Rehberg
Deformation induced defects in GaAs-The role of dislocations
Mater. Sci. Forum 255-257 (1997), 497-499 |
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| H. S. Leipner, J. Schreiber, H. Uniewski, S. Hildebrandt
Dislocation luminescence in cadmium telluride
Scanning Microsc. Intern. 11, 1 (1997), 149-160 |
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