Interdisziplinäres Zentrum für Materialwissenschaften
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      Nanotechnikum
Martin-Luther-Universität
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
Tel.: +49 345 55 28471
Telefax:+49 345 55 27390 email: info@cmat.uni-halle.de
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unfortunately no abstract available M. Schade, F. Heyroth, H. S. Leipner, M. Hanke
Combined HRXRD and EELS investigations of SiGe/Si(001) islands grown by means of liquid phase epitaxy.
Microsc. Microanal. 13 (2007), Suppl. 3
 
abstractS. Thraenert, E. M. Hassan, D. Enke, D. Fuerst, R. Krause-Rehberg
Verifying the RTE model: ortho-positronium lifetime measurement on controlled pore glasses.
phys. stat. sol. (c) 4, 10 (2007), 3819-3822
 
abstractM. Hanke, T. Boeck, A.-K. Gerlitzke, F. Syrowatka, F. Heyroth
Elastic strain relaxation in discontinuous wetting layers and its impact on lateral ordering of heteroepitaxial dots
Phys. Rev. B 74 (2006), 153304
 
abstractT. Höche, R. Böhme, J. W. Gerlach, B. Rauschenbach, F. Syrowatka
Nanoscale laser patterning of thin gold films
Phil. Mag. Lett. 86 (10) (2006), 661-667
 
abstractM. Hanke, M. Schmidbauer, D. Grigoriev, P. Sch?fer, R. K?hler, T. H. Metzger, Z. M. Wang, Y. I. Mazur, G. J. Salamo
Zero-strain GaAs quantum dot molecules as investigated by diffuse x-ray scattering
Appl. Phys. Lett. 89 (2006), 053116
 
abstractP. Werner, N. D. Zakhaarov, G. Gerth, L. Schubert, U. G?sele
On the formation of Si nanowires by molecular beam epitaxy
Intern. J. Mater. Res. 97, 7 (2006), 1008-1015
 
abstractM. Hanke, T. Boeck, A.-K. Gerlitzke
Template-based assembling of SiGe/Si(001) islands by local anodic oxidation
Appl. Phys. Lett. 88 (2006), 173106
 
abstractV. V. Mikhnovich
Formation of defects at high temperature plastic deformation of gallium arsenide
Dissertation (2006),
 
abstractM. Schmidbauer, Sh. Seydmohamadi, D. Grigoriev, Zh.M. Wang, Yu.I. Mazur, P. Sch?fer, M. Hanke, R. K?hler, G.J. Salamo
Controlling planar and vertical ordering in three-dimensional (In,Ga)As quantum dot lattices by GaAs surface orientation
Phys. Rev. Lett. 96 (2006), 066108
 
abstractM. Hanke, T. Boeck, A.-K. Gerlitzke, F. Syrowatka, F. Heyroth
Dedicated fabrication of silicon-based dot molecules with a specific and unique number of dots
Appl. Phys. Lett. 88 (2006), 063119
 
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