IZM -> Publikationen

Martin-Luther-Universität
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany

Tel.: +49 345 55 28471
Telefax:+49 345 55 27390 email: info@cmat.uni-halle.de

H. S. Leipner, R. F. Scholz, N. Engler, F. B?rner, P. Werner, U. G?sele
Diffusivity of arsenic interstitials in GaAs studied by sulfur in-diffusion
Physica B 273-274 (1999), 697-700

T. E. M. Staab, M. Haugk, A. Sieck, T. Frauenheim, H. S. Leipner
Magic number vacancy aggregates in Si and GaAs - structure and positron lifetime studies
Physica B 273-274 (1999), 501-504

T. E. M. Staab, M. Haugk, T. Frauenheim, H. S. Leipner
Magic number vacancy aggregates in GaAs: Structure and positron lifetime studies
Phys. Rev. Lett. 83, 26 (1999), 5519-5522

H. S. Leipner, R. F. Scholz, F. Syrowatka, J. Schreiber, P. Werner
Copper diffusion in dislocation-rich gallium arsenide
Phil. Mag. A 79,11 (1999), 2785-2802

J. Neumann-Zdralek
Elektronenmikroskopische Untersuchungen zur Fresnoitbildung in Bariumtitanatkeramik
Dissertation (1999),

R. Krause-Rehberg, H. S. Leipner
Positron annihilation in semiconductors
Berlin: Springer-Verlag ISBN 3-540-64371-0 (1999), Springer series in solid-state sciences 127

E. Langer, S. D?britz, A. R?der, W. Hauffe
Studies of polycrystalline materials by Pseudo Kossel technique
Fresenius J. Anal. Chem. 365 (1999), 212-216

N. Engler, H. S. Leipner, R. F. Scholz, P. Werner, F. Syrowatka, J. Schreiber, U. G?sele
Investigations of extended defects after sulfur diffusion in GaAs
Sol. State Phen. 69-70 (1999), 443-448

F. Heyroth, H.-R. H?che and C. Eisenschmidt
Contrast in X-ray section topographs of perfect silicon crystals using the Laue-Laue three-beam case of diffraction
J. Appl. Cryst. 32 (1999), 489-496

F. Heyroth, H.-R. H?che and C. Eisenschmidt
Imaging of the energy flow in the three-beam case of X-ray diffraction
J. Phys. D: Appl. Phys. 32 (1999), A133-138