Organisation
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Aktivitäten
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Kontakt |
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Angebote für Studenten |
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Bereiche im Nanotechnikum |
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Martin-Luther-Universität
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4, D-06120 Halle, Germany
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| M. Kolbe, C. Eisenschmidt, H.-R. H?che Einfluß der Defektstruktur von Kristallen auf den Polarisationszustand der gebeugten Strahlung HASYLAB? Annual Report 1998, Pt. I (1999), 729-730 |
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| H. S. Leipner, C. Hübner, T. E. M. Staab, M. Haugk, R. Krause-Rehberg Positron annihilation at dislocations and related point defects in semiconductors phys. stat. sol. (a) 171 (1999), 377-382 |
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| J. Schreiber, L. H?ring, H. Uniewski, S. Hildebrandt, H. S. Leipner Recognition and distribution of A(g) and B(g) dislocations in indentation zones on {111} and {110} surfaces of CdTe phys. stat. sol. (a) 171 (1999), 89-97 |
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| F. Heyroth, C. Eisenschmidt, H.-R. H?che X-ray topography of perfect crystals using the Laue-Laue three-beam case of diffraction Cryst. Res. Technol. 33 (1998), 547-554 |
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R. Krause-Rehberg, H. S. Leipner, A. Polity, F. Rudolf, R. Hammer, M. Jurisch Mechanical damage in GaAs wafers introduced by a diamond saw: A study by means of positron annihilation and electron microscopy phys. stat. sol. (a) 158,2 (1998), 377-383 |
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| C. Medrano, F. Heyroth, M. Schlenker, J. Baruchel and J.Espeso Two- and Three-Beam X-ray Diffraction Imaging of Domains in Magnetite J. Appl. Cryst. 31 (1998), 726-732 |
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| C. G. H?bner Punktdefektgeneration bei der Versetzungsbewegung Dissertation (1998), |
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U. Schmidt, C. Eisenschmidt, A. M. Zahra The Kinetics of the Amorphous-Crystalline Transition in AlDyT-Alloys Proceedings of ICAA-6, Aluminium Alloys Vol. 3 (1998), 1765-1770 |
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U. Schmidt, C. Eisenschmidt, A. M. Zahra The Kinetics of the Amorphous-Cristalline Transition in AlDyT-Alloys Proceedings of the 6th Intern. Conf.nce on Aluminium Alloys, ICAA-6, Toyohashi (1998), 787 |
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| S. Hildebrandt, J. Schreiber, W. Hergert, H. Uniewski, H. S. Leipner Theoretical fundamentals and experimental materials and defect studies using quantitative scanning electron microscopy-cathodoluminescence/electron beam induced current on compound semiconductors Scanning Microsc. Intern. 12, 4 (1998), 535-552 |
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