Interdisziplinäres Zentrum für Materialwissenschaften
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      Nanotechnikum
Martin-Luther-Universität
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
Tel.: +49 345 55 28471
Telefax:+49 345 55 27390 email: info@cmat.uni-halle.de
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abstractM. Hanke, M. Schmidbauer, D. Grigoriev, P. Sch?fer, R. K?hler, T. H. Metzger, Z. M. Wang, Y. I. Mazur, G. J. Salamo
Zero-strain GaAs quantum dot molecules as investigated by diffuse x-ray scattering
Appl. Phys. Lett. 89 (2006), 053116
 
abstractP. Werner, N. D. Zakhaarov, G. Gerth, L. Schubert, U. G?sele
On the formation of Si nanowires by molecular beam epitaxy
Intern. J. Mater. Res. 97, 7 (2006), 1008-1015
 
abstractM. Hanke, T. Boeck, A.-K. Gerlitzke
Template-based assembling of SiGe/Si(001) islands by local anodic oxidation
Appl. Phys. Lett. 88 (2006), 173106
 
abstractV. V. Mikhnovich
Formation of defects at high temperature plastic deformation of gallium arsenide
Dissertation (2006),
 
abstractM. Schmidbauer, Sh. Seydmohamadi, D. Grigoriev, Zh.M. Wang, Yu.I. Mazur, P. Sch?fer, M. Hanke, R. K?hler, G.J. Salamo
Controlling planar and vertical ordering in three-dimensional (In,Ga)As quantum dot lattices by GaAs surface orientation
Phys. Rev. Lett. 96 (2006), 066108
 
abstractM. Hanke, T. Boeck, A.-K. Gerlitzke, F. Syrowatka, F. Heyroth
Dedicated fabrication of silicon-based dot molecules with a specific and unique number of dots
Appl. Phys. Lett. 88 (2006), 063119
 
abstractM. Hanke, T. Boeck
On the various impact of chemical composition and elastic strain in SiGe nanoscale islands to the diffuse x-ray scattering
Physica E 32 (2006), 69
 
abstractJ. Zhang, F. Paumier, T. H?che, F. Heyroth, F. Syrowatka, R. J. Gaboriaud, H. S. Leipner
Electron energy-loss spectroscopy investigations of Y2O3 films on Si (001) substrate
Thin Sol. Films 496 (2006), 266-272
 
abstractH. J. Fan, B. Fuhrmann, R. Scholz, F. Syrowatka, A. Dadgar, A. Krost, M. Zacharias
Well-ordered ZnO nanowire arrays on GaN substrate fabricated via nanosphere lithography
J. Cryst. Growth 287 (2006), 34-38
 
abstractN. D. Zakharov, P. Werner, G. Gerth, L. Schubert, L. Sokolov, U. G?sele
Growth phenomena of Si and Si/Ge nanowires on Si (111) by molecular beam epitaxy
J. Cryst. Growth 290 (2006), 6-10
 
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