Emission in the narrow spectral range 950?1000 nm is obtained at the nanobridge optical transition involving experimentally and theoretically observed hybrid states in the InGaAs system, i.e., quantum dot-nanobridge-quantum well. It is experimentally shown that the oscillator strength of the new transition sharply increases in the built-in electric field of a pin junction. In the mode of weak currents in the system under study, the nanobridge transition is the dominant electroluminescence channel. At current densities >10 A cm2, nanobridge ?burning? is observed, after which the system becomes a ?quasi-classical? quantum dot-quantum well tunneling pair separated by a barrier.