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Martin-Luther-University
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
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 | H. S. Leipner
Die Objekte sind winzig ? die Chancen riesig
Das Innovationsforum ?Nanostrukturierte Materialien?
Scientia halensis 12, 2 (2004), S19 |
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| H. S. Leipner, Z. Wang. H. Gu, V. V. Mikhnovich, V. Bondarenko, R. Krause-Rehberg, J.-L. Demenet, J. Rabier
Defects in silicon plastically deformed at room temperature
phys. stat. sol. (a) 201, 9 (2004), 2021-2028 |
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| Hartmut S. Leipner, Hans-Reiner Höche (Ed.)
Nanostrukturierte Materialien im Blickpunkt der Wissenschaft.
Scientia Halensis Martin-Luther-Universität Halle-Wittenberg (2004), |
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| H. S. Leipner, R. Krause-Rehberg
Positron annihilation studies of open-volume defects in silicon
Progress in silicon materials - From microelectronics to photovoltaics and optoelectronics. Ed. D. Yang. Beijing: Science Press (2004), pp. 202-214 |
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| H. Lei, H. S. Leipner, V. Bondarenko, J. Schreiber
Identification of the 0.95 eV luminescence band in n-type GaAs:Si
J. Phys. Cond. Mat. 16 (2004), S279-285 |
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| M. R?ssel, H.-R. H?che, H. S. Leipner, D. V?ltzke, H.-P. Abicht, O. Hollricher, J. M?ller, S. Gablenz
Raman microscopic investigations of BaTiO3 precursors with core-shell structure
Analyt. Bioanalyt. Chem. 380 (2004), 157-162 |
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| Hartmut S. Leipner (Ed.)
Innovationsforum Nanostrukturierte Materialien
Martin-Luther-Universität Halle-Wittenberg (2003), |
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| H. S. Leipner, V. V. Mikhnovich, V. Bondarenko, Z. Wang. H. Gu, R. Krause-Rehberg, J.-L. Demenet, J. Rabier
Positron annihilation of defects in silicon deformed at different temperatures
Physica B 340-342 (2003), 617-621 |
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| J. Gebauer, M. Lausmann, F. Redmann, R. Krause-Rehberg, H. S. Leipner, E. R. Weber, P. Ebert
Determination of the Gibbs free energy of formation of Ga vacancies in GaAs by positron annihilation
Phys. Rev. B 67, 23 (2003), 235207 |
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| D. Lorenz, A. Zeckzer, U. Hilpert, P. Grau, H. Johansen, H. S. Leipner
Pop-in effect as homogeneous nucleation of dislocations during nanoindentation
Virt. J. Nanoscale Sci. Technol. 7, 20 (2003), |
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