Interdisziplinäres Zentrum für Materialwissenschaften
  Lab - Electron microscopy [search]   
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Martin-Luther-University
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
Phone: +49 345 55 28471
Telefax:+49 345 55 27390 e-mail: info@cmat.uni-halle.de

The development of modern materials requires precise knowledge of the microscopic or nanoscopic material properties combined with their chemical-structural structure. This laboratory area has various modern microscopic examination techniques for the interdisciplinary processing of topics. In addition to the high-resolution image of the surface topography and element distribution, the available equipment pool opens up e.g. also determining the microtexture of crystalline samples using electron backscattering (EBSD) or performing in-situ experiments.

The following examination techniques and devices are available:

  • Low-voltage electron microscopy (Zeiss Gemini 500) in combination with EDX (Oxford Ultim Max & Oxford Extreme) and EBSD (Oxford C-Nano)
    Field emission scanning electron microscope for high-resolution surface imaging even with low primary electron energies: 0,05…30 kV, beam diameter 1 nm @ 500V, 0.9 nm @ 1 kV; variable pressure mode to reduce sample charging; Highly efficient EDX detector (SDD) with element detection up to lithium
  • Enviromental scanning electron microscopy (Phillips XL30 ESEM FEG)
    Field emission scanning electron microscope for the surface imaging of samples even in a gas atmosphere (ESEM mode), primary electron energy: 0,5…30 kV, beam diameter: 2 nm @ 30 kV, 5nm @ 1 kV, pressure range: high vacuum or 0,3…10 Torr (ESEM), Temperature range: -5…60 °C; EDX (EDAX-SiLi-Detektor)
  • Combined scanning electron microscopy with focused ion beam (FEI Versa 3D) [*]
    Universal focused ion beam device for nanopreparation and inspection; Schottky field emitter cathode 0,2…30 kV; High current ion column with Ga ion source: 0.5..30kV bei 0.6pA...60nA, 7 nm ion beam resolution at 30 kV; in-situ micromanipulator; GIS system for the deposition of C, Pt, W; EDX (EDAX Octane Elite)
  • Transmission electron microscopy (Zeiss LEO 912) [*]
    Imaging transmission electron microscope with energy filter and LaB6 cathode, primary beam energy: 80…120 keV, 2k slow scan CCD camera, point resolution 3.7 Å (TEM mode)
  • Classical TEM & SEM praparation of hard condensed matter
    Thread saws, ultrasonic drills, grinding and polishing devices, dimplers;
    Ar ion etcher (Precision Ion Polishing System Gatan 691);
    Carbon coating (Cressington 208 carbon coater); Metal coating (Cressington 208HR sputter coater);
    Combined etching and coating system for polishing and exposing surfaces, slope etching process, high-resolution in-situ ion sputter coating (Gatan Precision Etching and Coating System PECS)
  • Light microscopy and image processing
    Light microscopes with cameras for bright field, dark field and polarization microscopy in connection with an SIS analysis image processing system, differential interference contrast, extended focal imaging, objectives 5x...100x (Leica DM RXE & Zeiss Auflichtmikroskop Axio Imager)
  • Electrical measurements
    Tip measuring station with micromanipulators for resistance measurement on microstructures, four-point method

* in cooperation with the ZIK SiliNano and the Institute of Physics

contact: Dr. Frank Heyroth



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