In addition to the classic lithography methods such as electron beam or photolithography in this lab area, among others alternative nanolithography processes such as laser interference lithography or imprint lithography for the production of regular, laterally structured functional layers with structure sizes <100 nm for a wide variety of applications have also been developed. In addition to the lithography process itself, a number of upstream and downstream processes, such as cleaning, coating, electron beam vapor deposition in a high vacuum, thermal treatment, as well as wet and dry etching processes under clean room conditions, are available.

The following examination techniques and devices are available:

• Laser interference lithography ( laser: CryLaS 50 mW & 10 mW with λ=266 nm)
  Production of regular nanostructures with periods of 150…700 nm, max. sample size: 50 mm diameter
• Electron beam lithography (Raith Pioneer) [*]
  EBL with field emission cathode and sample table controlled by laser interferometry, primary beam energy: 0.5…30 keV, smallest structure size = 20 nm, field stitching accuracy = 50 nm (mean + 2σ), laser stage travel range 50 mm × 50 mm
• Maskless optical lithography (DMO MicroWriter ML3) [*]
  UV exposure unit with mirror array, 385 nm laser, 150 mm × 150 mm sample size
• Photolithography (SUSS MJB-3 Mask Aligner) [*]
  UV exposure unit with 365 nm illumination, wafer size max. 3", resolution of the exposure 0.8µm, mask alignment:> 0.25 µm
• Nanoimprint lithography (OBDUCAT Nanoimprinter NIL-2,5“)
  Hot embossing max. 250 °C, 70 bar, max. stamp - substrate size 65 mm diameter
• Reactive ion etching / plasma etching (Oxford Plasmalab 100 System) [*²]
  Plasma source RIE/ICP with max. 300 W/5000 W, wafer 4" or 6", two process chambers (F- or Cl-processes),
• Plasma cleaning (Diener Nano)
  Etching, activation and cleaning of surfaces for subsequent processes; process and purging gases: O2, N2, Ar, generator LF 40 kHz with max. 300 W
• Profilometry (Veeco Dektak 150) [*]
  one-dimensional diamond stylus profilometer with TV camera, stylus contact pressure: 1…15 mg, reproducibility: 6 Å (σ @ 100 nm edge), height range: 524 µm, max. scan length: 55 mm
• Wire bonding (tpt HB05) [*]
  Wire bonders with wedge / wedge or ball / wedge bonding for electrical contacting of structured samples
• Light microscopic wafer inspection (Zeiss Axiotron)
  
• thermal or electron beam evaporation
  Electron beam evaporation system MSBA400: 6-fold crucible evaporator 6 kW, evaporator materials Pt, Au, Cr, Ti, Al wafers up to 6", radiation heating up to 350°C;
  Roth & Rau plasma laboratory system PLS 500P: DC sputter magnetron with 4 "target for metal coating in HV, thermal evaporator;
  Sputtering system X320: process space for max. 3" wafers, existing target materials Ni, Fe–Ni alloys, Cu;
  HV-Anlagen B30 HVT Dresden: thermal vapor deposition with Au, Ag, Al, Cr, Ti
• Tempering furnaces
  

* in cooperation with the group Nanostrukturierte Materialien of the Institute of Physics
*² in cooperation with the group Nichtlineare Nanophotonik of the Institute of Physics

contact: Dr. Bodo Fuhrmann