Interdisziplinäres Zentrum für Materialwissenschaften
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Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
Phone: +49 345 55 28471
Telefax:+49 345 55 27390 e-mail:
[Papers] [Theses] [Reports] [Posters]
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abstractTino Rublack, Martin Schade, Markus Muchow, Hartmut S. Leipner, Gerhard Seifert
Proof of damage-free selective removal of thin dielectric coatings on silicon wafers by irradiation with femtosecond laser pulses.
J. Appl. Phys. 112 (2012), 023521
abstractI. Ratschinski, H.S. Leipner, F. Heyroth, W. Fränzel, G. Leibiger, F. Habel
The effect of the indenter orientation on the formation of dislocations and cracks in (0001) GaN bulk crystals.
Mater. Sci. Forum 725 (2012), 67-70
abstractMartin Schade, Hartmut S. Leipner, Wolfgang Fränzel
Spectroscopic investigation of silicon polymorphs formed by indentation.
Mater. Sci. Forum 725 (2012), 199-202
abstractV. G. Talalaev, A. A. Tonkih, N. D. Zaharov, A. V. Senicev, J. W. Tomm, P. Werner, B. V. Novikov, L. V. Asryan, B. Fuhrmann, J. Schilling, H. S. Leipner, A. D. Buravlev, Ju. B. Samsonenko, A. I. Hrebtov, I. P. Sosmikov, G. E. Zyrlin
Svetoizlucajuscie tunnel'nye nanostruktury na osnove kvantovyh tocek b matrice krenija i arsenida gallija (in Russian).
Fiz. tehn. poluprovod. 46, 11 (2012), 1492-1503
abstractNadine Geyer, Bodo Fuhrmann, Zhipeng Huang, Johannes de Boor, Hartmut S. Leipner, Peter Werner
Model for the mass transport during metal-assisted chemical etching with contiguous metal films as catalysts.
J. Phys. Chem. C 116 (2012), 13446-13451
abstractA. A. Tonkikh, N. Geyer , B. Fuhrmann , H. S. Leipner , P. Werner
Pathway of Porous Silicon Formation Inside Si Nanowires Throughout Metal Assisted Etching.
MRS Proc. 1408 (2012), MRSF11
abstractMaurizio Roczen, Martin Schade, Enno Malguth, Gordon Callsen, Thomas Barthel, Orman Gref, Jan A. Töfflinger, Andreas Schöpke, Manfred Schmidt, Hartmut S. Leipner, Florian Ruske, Matthew R. Phillips, Axel Hoffmann, Lars Korte, Bernd Rech
Structural investigations of silicon nanostructures grown by self-organized island formation for photovoltaic applications.
Appl. Phys. A 108 (2012), 719-726
abstractV. G. Talalaev, A. A. Tonkikha, N. D. Zakharov, A. V. Senichev, J. W. Tomm, P. Werner, B. V. Novikov, L. V. Asryan, B. Fuhrmann, J. Schilling, H. S. Leipner, A. D. Bouraulev, Yu. B. Samsonenko, A. I. Khrebtov, I. P. Soshnikov, G. E. Cirlin
Ligh-emitting tunneling nanostructures based on quantum dots in a Si and GaAs Matrix.
Semicond. 46, 11 (2012), 1460-1470
abstractJin-Biao Pang, Hartmut S. Leipner, Reinhard Krause-Rehberg, Zhu Wang, Kai Zhou. Hui Li
Thermal stability of defects in plastically deformed silicon studied by positron lifetime spectroscopy
Semicond. Sci. Technol. 27, 3 (2012), 035023
abstract Tino Rublack, Stefan Hartnauer, Michael Mergner, Markus Muchow, Martin Schade, Hartmut S. Leipner, Gerhard Seifert
Mechanism of selective removal of transparent layers on semiconductors using ultrashort laser pulses.
Proc. SPIE 8247 (2012), 82470Z
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