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Martin-Luther-University
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
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10 | 20 | 30 | 40 |50 | 60 | 70 | 80 | 90 | 100 | 110 | 120 | 130 | 140 | 143 | All
| V. G. Talalaev, A. A. Tonkih, N. D. Zaharov, A. V. Senicev, J. W. Tomm, P. Werner, B. V. Novikov, L. V. Asryan, B. Fuhrmann, J. Schilling, H. S. Leipner, A. D. Buravlev, Ju. B. Samsonenko, A. I. Hrebtov, I. P. Sosmikov, G. E. Zyrlin Svetoizlucajuscie tunnel'nye nanostruktury na osnove kvantovyh tocek b matrice krenija i arsenida gallija (in Russian). Fiz. tehn. poluprovod. 46, 11 (2012), 1492-1503 |
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| Nadine Geyer, Bodo Fuhrmann, Zhipeng Huang, Johannes de Boor, Hartmut S. Leipner, Peter Werner Model for the mass transport during metal-assisted chemical etching with contiguous metal films as catalysts. J. Phys. Chem. C 116 (2012), 13446-13451 |
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| A. A. Tonkikh, N. Geyer , B. Fuhrmann , H. S. Leipner , P. Werner Pathway of Porous Silicon Formation Inside Si Nanowires Throughout Metal Assisted Etching. MRS Proc. 1408 (2012), MRSF11 |
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| Maurizio Roczen, Martin Schade, Enno Malguth, Gordon Callsen, Thomas Barthel, Orman Gref, Jan A. Töfflinger, Andreas Schöpke, Manfred Schmidt, Hartmut S. Leipner, Florian Ruske, Matthew R. Phillips, Axel Hoffmann, Lars Korte, Bernd Rech Structural investigations of silicon nanostructures grown by self-organized island formation for photovoltaic applications. Appl. Phys. A 108 (2012), 719-726 |
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| V. G. Talalaev, A. A. Tonkikha, N. D. Zakharov, A. V. Senichev, J. W. Tomm, P. Werner,
B. V. Novikov, L. V. Asryan, B. Fuhrmann, J. Schilling, H. S. Leipner, A. D. Bouraulev, Yu. B. Samsonenko, A. I. Khrebtov, I. P. Soshnikov, G. E. Cirlin Ligh-emitting tunneling nanostructures based on quantum dots in a Si and GaAs Matrix. Semicond. 46, 11 (2012), 1460-1470 |
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| Jin-Biao Pang, Hartmut S. Leipner, Reinhard Krause-Rehberg, Zhu Wang, Kai Zhou. Hui Li Thermal stability of defects in plastically deformed silicon studied by positron lifetime spectroscopy Semicond. Sci. Technol. 27, 3 (2012), 035023 |
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| Tino Rublack, Stefan Hartnauer, Michael Mergner, Markus Muchow, Martin Schade, Hartmut S. Leipner, Gerhard Seifert Mechanism of selective removal of transparent layers on semiconductors using ultrashort laser pulses. Proc. SPIE 8247 (2012), 82470Z |
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| Maurizio Roczen, Enno Malguth, Martin Schade, Andreas Schöpke, Abdelazize Laades, Michael Blech, Orman Gref, Thomas Barthel, Jan Amaru Töfflinger, Manfred Schmidt, Hartmut S. Leipner, Lars Korte, Bernd Rech Comparison of growth methods for Si/SiO2 nanostructures as nanodot heteroemitters for photovoltaic application. J. Non-Cryst. Sol. 358 (2011), 2253-2256 |
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| A. A. Tonkikh, N. D. Zakharov, A. V. Novikov, K. E. Kudryavtsev, V. G. Talalaev, B. Fuhrmann, H. S. Leipner, P. Werner Sb mediated formation of Ge/Si quantum dots: Growth and properties. Thin Sol. Films (2011), |
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| A. Buchsteiner, M. Zenkner, T. Großmann, C. Ehrhardt, M. Diestelhorst, S. Lemm, W. Münchgesang, C. Pientschke, J. Glenneberg, H. Beige, S. G. Ebbinghaus, H. S. Leipner Investigation of 0-3 composites for novel capacitors and energy storage. Proc. SPIE 8102 (2011), 81021A |
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10 | 20 | 30 | 40 |50 | 60 | 70 | 80 | 90 | 100 | 110 | 120 | 130 | 140 | 143 | All
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