Interdisziplinäres Zentrum für Materialwissenschaften
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Martin-Luther-University
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
Phone: +49 345 55 28471
Telefax:+49 345 55 27390 e-mail: info@cmat.uni-halle.de
[Papers] [Theses] [Reports] [Posters]
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abstractV. G. Talalaev, A. A. Tonkih, N. D. Zaharov, A. V. Senicev, J. W. Tomm, P. Werner, B. V. Novikov, L. V. Asryan, B. Fuhrmann, J. Schilling, H. S. Leipner, A. D. Buravlev, Ju. B. Samsonenko, A. I. Hrebtov, I. P. Sosmikov, G. E. Zyrlin
Svetoizlucajuscie tunnel'nye nanostruktury na osnove kvantovyh tocek b matrice krenija i arsenida gallija (in Russian).
Fiz. tehn. poluprovod. 46, 11 (2012), 1492-1503
 
abstractNadine Geyer, Bodo Fuhrmann, Zhipeng Huang, Johannes de Boor, Hartmut S. Leipner, Peter Werner
Model for the mass transport during metal-assisted chemical etching with contiguous metal films as catalysts.
J. Phys. Chem. C 116 (2012), 13446-13451
 
abstractA. A. Tonkikh, N. Geyer , B. Fuhrmann , H. S. Leipner , P. Werner
Pathway of Porous Silicon Formation Inside Si Nanowires Throughout Metal Assisted Etching.
MRS Proc. 1408 (2012), MRSF11
 
abstractMaurizio Roczen, Martin Schade, Enno Malguth, Gordon Callsen, Thomas Barthel, Orman Gref, Jan A. Töfflinger, Andreas Schöpke, Manfred Schmidt, Hartmut S. Leipner, Florian Ruske, Matthew R. Phillips, Axel Hoffmann, Lars Korte, Bernd Rech
Structural investigations of silicon nanostructures grown by self-organized island formation for photovoltaic applications.
Appl. Phys. A 108 (2012), 719-726
 
abstractV. G. Talalaev, A. A. Tonkikha, N. D. Zakharov, A. V. Senichev, J. W. Tomm, P. Werner, B. V. Novikov, L. V. Asryan, B. Fuhrmann, J. Schilling, H. S. Leipner, A. D. Bouraulev, Yu. B. Samsonenko, A. I. Khrebtov, I. P. Soshnikov, G. E. Cirlin
Ligh-emitting tunneling nanostructures based on quantum dots in a Si and GaAs Matrix.
Semicond. 46, 11 (2012), 1460-1470
 
abstractJin-Biao Pang, Hartmut S. Leipner, Reinhard Krause-Rehberg, Zhu Wang, Kai Zhou. Hui Li
Thermal stability of defects in plastically deformed silicon studied by positron lifetime spectroscopy
Semicond. Sci. Technol. 27, 3 (2012), 035023
 
abstract Tino Rublack, Stefan Hartnauer, Michael Mergner, Markus Muchow, Martin Schade, Hartmut S. Leipner, Gerhard Seifert
Mechanism of selective removal of transparent layers on semiconductors using ultrashort laser pulses.
Proc. SPIE 8247 (2012), 82470Z
 
abstractMaurizio Roczen, Enno Malguth, Martin Schade, Andreas Schöpke, Abdelazize Laades, Michael Blech, Orman Gref, Thomas Barthel, Jan Amaru Töfflinger, Manfred Schmidt, Hartmut S. Leipner, Lars Korte, Bernd Rech
Comparison of growth methods for Si/SiO2 nanostructures as nanodot heteroemitters for photovoltaic application.
J. Non-Cryst. Sol. 358 (2011), 2253-2256
 
abstractA. A. Tonkikh, N. D. Zakharov, A. V. Novikov, K. E. Kudryavtsev, V. G. Talalaev, B. Fuhrmann, H. S. Leipner, P. Werner
Sb mediated formation of Ge/Si quantum dots: Growth and properties.
Thin Sol. Films (2011),
 
abstractA. Buchsteiner, M. Zenkner, T. Großmann, C. Ehrhardt, M. Diestelhorst, S. Lemm, W. Münchgesang, C. Pientschke, J. Glenneberg, H. Beige, S. G. Ebbinghaus, H. S. Leipner
Investigation of 0-3 composites for novel capacitors and energy storage.
Proc. SPIE 8102 (2011), 81021A
 
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