Interdisziplinäres Zentrum für Materialwissenschaften
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Martin-Luther-University
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
Phone: +49 345 55 28471
Telefax:+49 345 55 27390 e-mail: info@cmat.uni-halle.de
[Papers] [Theses] [Reports] [Posters]
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abstractH. S. Leipner, C. Hübner, T. E. M. Staab, M. Haugk, R. Krause-Rehberg
Positron annihilation at dislocations and related point defects in semiconductors
phys. stat. sol. (a) 171 (1999), 377-382
 
abstractJ. Schreiber, L. H?ring, H. Uniewski, S. Hildebrandt, H. S. Leipner
Recognition and distribution of A(g) and B(g) dislocations in indentation zones on {111} and {110} surfaces of CdTe
phys. stat. sol. (a) 171 (1999), 89-97
 
unfortunately no abstract available R. Krause-Rehberg, H. S. Leipner, A. Polity, F. Rudolf, R. Hammer, M. Jurisch
Mechanical damage in GaAs wafers introduced by a diamond saw: A study by means of positron annihilation and electron microscopy
phys. stat. sol. (a) 158,2 (1998), 377-383
 
abstractS. Hildebrandt, J. Schreiber, W. Hergert, H. Uniewski, H. S. Leipner
Theoretical fundamentals and experimental materials and defect studies using quantitative scanning electron microscopy-cathodoluminescence/electron beam induced current on compound semiconductors
Scanning Microsc. Intern. 12, 4 (1998), 535-552
 
abstractR. Krause-Rehberg, H. S. Leipner, T. Abgarjan, A. Polity
Review of defect investigations by means of positron annihilation in II-VI compound semiconductors
Appl. Phys. A 66 (1998), 599-614
 
unfortunately no abstract available J. Schreiber, H. Uniewski, S. Hildebrandt, L. H?ring, H. S. Leipner
Distinction of the recombination properties and identification of Y luminescence at glide dislocations in CdTe
Inst. Phys. Conf. Ser. 157 (1997), 651-654
 
unfortunately no abstract available S. Hildebrandt, H. Uniewski, J. Schreiber, H. S. Leipner
Localization of Y luminescence at glide dislocations in cadmium telluride
J. Physique III 7, 7 (1997), 1505-1514
 
abstractH. S. Leipner, R. Scholz, F. Syrowatka, H. Uniewski, J. Schreiber
Interaction of copper with dislocations in GaAs
J. Physique III 7, 7 (1997), 1495-1503
 
abstractR. Krause-Rehberg, H. S. Leipner
Determination of absolute vacancy concentrations in semiconductors by means of positron annihilation
Appl. Phys. A 64 (1997), 457-466
 
unfortunately no abstract available H. S. Leipner, C. H?bner, R. Krause-Rehberg
Study of plastically deformed semiconductors by means of positron annihilation
Mater. Sci. Forum 258-263 (1997), 981-986
 
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