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Martin-Luther-University
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
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10 | 20 | 30 | 40 | 50 | 60 | 70 | 80 | 90 | 100 | 110 | 120 | 130 | 140 | 143 | All
| TILL MÄLZER, LENA MATHIES, TINO BAND, ROBERT GORGAS, HARTMUT S. LEIPNER Influence of Different Solvents and High-Electric-Field Cycling on Morphology and Ferroelectric Behavior of Poly(Vinylidene Fluoride-Hexafluoropropylene) Films Materials 14 (2021), |
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| LENA MATHIES, DIDDO DIDDENS, DENGPAN DONG, DMITRY BEDROV, HARTMUT LEIPNER Transport mechanism of lithium ions in non-coordinating P(VdF-HFP) copolymer matrix Solid State Ionics 357 (2020), |
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| LenaMathies, DiddoDiddens, Dengpan Dong, Dmitry Bedrov,Hartmut Leipner Transport mechanism of lithium ions in non-coordinating P(VdF-HFP) copolymer matrix Solid State Ionics 357 (2020), |
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| Charlotte Feneis, Sven Steinbach, Hartmut Leipner Investigations of the Influence of LED Light on the Colour Stability of Mineral Pigments in Cellulose Binder Journal of Materials Sciences and Applications 05 (2019), 35-43 |
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| T. Band, T. Mälzer, S. Wickert, H. S. Leipner, S. G. Ebbinghaus, K. Dörr, M. Diestelhorst Three different mechanisms of self-discharge behavior in poly(vinylidene fluoride-hexafluoro-propylene) for dielectric energy storage. J. Phys. En. 1 (2019), |
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| P. Kavouras, I. Ratschinski, G.P. Dimitrakopulos, H.S. Leipner, Ph. Komninou, G. Leibiger & F. Habel Deformation and fracture in (0001) and (10-10) GaN single crystals Mater.Sci.Technol. 34 (2018), 1531-1538 |
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| Daniel Oriwol, Matthias Trempa, Lamine Sylla, Hartmut S. Leipner Investigation of dislocation cluster evolution during directional solidification of multicrystalline silicon J. Cryst. Growth 463 (2017), 1-9 |
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| E. Jarzembowski, B. Fuhrmann, H. Leipner, W. Fränzel, R. Scheer Ultrathin Cu(In,Ga)Se2 solar cells with point-like back contact in experiment and simulation. Thin Sol. Films (2016), |
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| Enrico Jarzembowski, Thomas Schneider, Bodo Fuhrmann, Hartmut Leipner, Wolfgang Fränzel, Roland Scheer Enhanced Light Management in Cu(In,Ga)Se2 Solar Cells by Structured Rear Contacts OSA Technical Digest paper PW3B.4 (2016), |
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| V. G. Talalaev, B. V. Novikov, G. E. Cirlin, H. S. Leipner Temperature quenching of spontaneous emission in tunnel-injection nanostructures. Semicond. 49, 11 (2015), 1483-1492 |
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| Nadine Geyer, Nicole Wollschläger, Bodo Fuhrmann, Alexander Tonkikh, Andreas Berger, Peter Werner, Marco Jungmann, Reinhard Krause-Rehberg, S. Leipner Influence of the doping level on the porosity of silicon nanowires prepared by metal-assisted chemical etching. Nanotechnol. 26, 24 (2015), 245301 |
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| Martin Schade, Bodo Fuhrmann, Angelika Chassé, Frank Heyroth, Mauricio Roczen, Hartmut S. Leipner Distinction between amorphous and crystalline silicon by means of electron energy-loss spectroscopy. Appl. Phys. A (2015), |
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| V. G. Talalaev, B. V. Novikov, G. E. Cirlin, H. S. Leipner Temperature quenching of spontaneous emission in tunnel injection nanostructures. Fiz. Techn. Poluprov. 49, 11 (2015), 1531-1539 |
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Goerg Michler, Hartmut Leipner, Dieter Katzer Elektronenmikroskopie in Halle. Elektronenmikroskopie in Halle (Saale). Stand, Perspektiven, Anwendungen. Halle: Heinz-Bethge-Stiftung (2014), 10-15 |
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| Jens Glenneberg, Mandy Zenkner, Gerald Wagner, Sebastian Lemm, Claudia Ehrhardt, Wolfram Münchgesang, Alexandra Buchsteiner, Martin Diestelhorst, Horst Beige, Stefan G. Ebbinghaus, Hartmut S. Leipner Morphological and microstructural investigations of composite dielectrics for energy storage. RSC Advances 4 (2014), 61268-61276 |
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M. S. Niepel, B. Fuhrmann, H. S. Leipner, T. Groth Combined topographical and chemical cues on planar surfaces alter the performance of human fibroblasts. Bionanomater. 15, S1 (2014), S157 |
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| Claudia Ehrhardt, Christian Fettkenhauer, Jens Glenneberg, Wolfram Münchgesang, Hartmut S. Leipner, Gerald Wagner, Martin Diestelhorst, Christoph Pientschke, Horst Beige, Stefan G. Ebbinghaus Enhanced dielectric properties of sol-gel-BaTiO3/P(VDF-HFP) composite films without surface functionalization. RSC Adv. 4, 76 (2014), 40321-40329 |
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| Hartmut S. Leipner Nicht technologieneutral. Phys. J. 13, 7 (2014), 13 |
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| Koksal Yildiz, Unal Akgul, Hartmut S Leipner, Yusuf Atici Microstructure of thermoelectric (Bi0.15Sb0.85)2Te3 film. Appl. Phys. A 117 (3) (2014), 1387-1392 |
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| A. A. Tonkikh, N. D. Zakharov, C. Eisenschmidt, H. S. Leipner, P. Werner Aperiodic SiSn/Si Multilayers for Thermoelectric Applications. J. Cryst. Growth 392 (2014), 49-51 |
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| M. Schade, T. Mchedlidze, M. Kittler, H. S. Leipner Light induced crystallization of an amorphous silicon film embedded between silicon oxide layers. phys. stat. sol. (b) 251(2) (2014), 439-445 |
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| Martin Schade, Bodo Fuhrmann, Christian Bohley, Sven Schlenker, Neha Sardana, Jörg Schilling, Hartmut S. Leipner Regular arrays of Al nanoparticles for plasmonic applications J. Appl. Phys. 115, 8 (2014), 084309 |
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| I. Höger, T. Schmidt, A. Landgraf, M. Schade, A. Gawlik, G. Andrä, H.S. Leipner, and F. Falk In situ excimer laser irradiation as cleaning tool for solid phase epitaxy of laser crystallized polycrystalline silicon thin films phys. stat. sol. (a) 210, 12 (2013), 2729-2735 |
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| Claudia Ehrhardt, Christian Fettkenhauer, Jens Glenneberg, Wolfram Münchgesang, Hartmut S. Leipner, Martin Diestelhorst, Sebastian Lemm, Horst Beige, Stefan G. Ebbinghaus
A solution-based approach to composite dielectric films of surface functionalized CaCu3Ti4O12 and P(VDF-HFP). J. Mater. Chem. A 2 (7) (2013), 2266-2274 |
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| Marcus S. Niepel, Bodo Fuhrmann, Hartmut S. Leipner, Thomas Groth Nanoscaled surface patterns influence adhesion and growth of human dermal fibroblasts. Langmuir 29, 43 (2013), 13278-13290 |
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| D. Oriwol, E.-R. Carl, A. N. Danilewsky, L. Sylla, W. Seifert, M. Kittler, H. S. Leipner Small-angle subgrain boundaries emanating from dislocation pile-ups in multicrystalline silicon studied with synchrotron white-beam X-ray topography. Acta Mater. 61, 18 (2013), 6903-6910 |
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| M. S. Niepel, B. Fuhrmann, H. S. Leipner, T. Groth The combination of topographical and chemical stimuli controls adhesion and growth of human fibroblasts. Intern. J. Art. Organs 36, 8 (2013), 551 |
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| C. Ehrhardt, C. Fettkenhauer, J. Glenneberg, W. Münchgesang, C. Pientschke, T. Großmann, M. Zenkner, G. Wagner, H. S. Leipner, A. Buchsteiner, M. Diestelhorst, S. Lemm, H. Beige, S. G. Ebbinghaus BaTiO3-P(VDF-HFP) nanocomposite dielectrics - Influence of surface modification and dispersion additives. Mater. Sci. Eng. B 178 (2013), 881-888 |
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| M. Elsayed, R. Krause-Rehberg, B. Korff, I. Ratschinski, H. S. Leipner Divacancy complexes induced by Cu diffusion in Zn-doped GaAs. Eur. Phys. J. B 86 (2013), 358 |
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| Martin Hempel, Jens W. Tomm, Fabio La Mattina, Ingmar Ratschinski, Martin Schade, Ivan Shorubalko, Michael Stiefel, Hartmut S. Leipner, Frank M. Kießling, Thomas Elsaesser Microscopic origins of catastrophic optical damage in diode lasers. IEEE J. Sel. Top. Quantum Electron. 19, 4 (2013), 1500508 |
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| Koksal Yildiz, Unal Akgul, Hartmut S. Leipner, Yusuf Atici Electron microscopy study of thermoelectric n-type Bi2(Te0.9Se0.1)3 film deposited by dc sputtering. Superlatt. Microstruct. 6 (2013), 60-71 |
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| Nadine Geyer, Bodo Fuhrmann, Hartmut S. Leipner, Peter Werner Ag-Mediated charge transport during metal-assisted chemical etching of silicon nanowires. ACS Appl. Mater. Interfaces 5, 10 (2013), 4302-4308 |
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| M. Elsayed, R. Krause-Rehberg, B. Korff, S. Richter, H. S. Leipner Identification of As-vacancy complexes in Zn-diffused GaAs. J. Appl. Phys. 113, 9 (2013), 094902 |
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| Maurizio Roczen, Abdelazize Laades, Martin Schade, Thomas Barthel, Jose Ordeñez, Jan Amaru Töfflinger, Enno Malguth, Florian Ruske, Caspar Leendertz, Lars Korte, Hartmut S. Leipner, Bernd Rech Structural properties of Si/SiO2 nanostructures grown by decomposition of substoichiometric SiOxNy layers for photovoltaic applications. phys. stat. sol. (a) 210, 4 (2013), 676-681 |
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| I. Ratschinski, H. S. Leipner, F. Heyroth, W. Mook, J. Michler, W. Fränzel, G. Leibiger and F. Habel Cracks and dislocations at Vickers, Berkovich and cube corner indentations in (0001) GaN single crystals physica status solidi c 10 (1) (2013), 76-79 |
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| M. S. Niepel, B. Fuhrmann, H. S. Leipner, T. Groth Chemically modified nanostructures influencing mammalian cell adhesion Intern. J. Art. Organs 35, 8 (2012), 565 |
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| C. Khare, J. W. Gerlach, T. Höche, B. Fuhrmann, H. S. Leipner, B. Rauschenbach Effects of annealing on arrays of Ge nanocolumns formed by glancing angle deposition. Appl. Surf. Sci. 258 (2012), 9762-9769 |
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| Tino Rublack, Martin Schade, Markus Muchow, Hartmut S. Leipner, Gerhard Seifert Proof of damage-free selective removal of thin dielectric coatings on silicon wafers by irradiation with femtosecond laser pulses. J. Appl. Phys. 112 (2012), 023521 |
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| I. Ratschinski, H.S. Leipner, F. Heyroth, W. Fränzel, G. Leibiger, F. Habel The effect of the indenter orientation on the formation of dislocations and cracks in (0001) GaN bulk crystals. Mater. Sci. Forum 725 (2012), 67-70 |
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| Martin Schade, Hartmut S. Leipner, Wolfgang Fränzel Spectroscopic investigation of silicon polymorphs formed by indentation. Mater. Sci. Forum 725 (2012), 199-202 |
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| V. G. Talalaev, A. A. Tonkih, N. D. Zaharov, A. V. Senicev, J. W. Tomm, P. Werner, B. V. Novikov, L. V. Asryan, B. Fuhrmann, J. Schilling, H. S. Leipner, A. D. Buravlev, Ju. B. Samsonenko, A. I. Hrebtov, I. P. Sosmikov, G. E. Zyrlin Svetoizlucajuscie tunnel'nye nanostruktury na osnove kvantovyh tocek b matrice krenija i arsenida gallija (in Russian). Fiz. tehn. poluprovod. 46, 11 (2012), 1492-1503 |
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| Nadine Geyer, Bodo Fuhrmann, Zhipeng Huang, Johannes de Boor, Hartmut S. Leipner, Peter Werner Model for the mass transport during metal-assisted chemical etching with contiguous metal films as catalysts. J. Phys. Chem. C 116 (2012), 13446-13451 |
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| A. A. Tonkikh, N. Geyer , B. Fuhrmann , H. S. Leipner , P. Werner Pathway of Porous Silicon Formation Inside Si Nanowires Throughout Metal Assisted Etching. MRS Proc. 1408 (2012), MRSF11 |
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| Maurizio Roczen, Martin Schade, Enno Malguth, Gordon Callsen, Thomas Barthel, Orman Gref, Jan A. Töfflinger, Andreas Schöpke, Manfred Schmidt, Hartmut S. Leipner, Florian Ruske, Matthew R. Phillips, Axel Hoffmann, Lars Korte, Bernd Rech Structural investigations of silicon nanostructures grown by self-organized island formation for photovoltaic applications. Appl. Phys. A 108 (2012), 719-726 |
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| V. G. Talalaev, A. A. Tonkikha, N. D. Zakharov, A. V. Senichev, J. W. Tomm, P. Werner,
B. V. Novikov, L. V. Asryan, B. Fuhrmann, J. Schilling, H. S. Leipner, A. D. Bouraulev, Yu. B. Samsonenko, A. I. Khrebtov, I. P. Soshnikov, G. E. Cirlin Ligh-emitting tunneling nanostructures based on quantum dots in a Si and GaAs Matrix. Semicond. 46, 11 (2012), 1460-1470 |
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| Jin-Biao Pang, Hartmut S. Leipner, Reinhard Krause-Rehberg, Zhu Wang, Kai Zhou. Hui Li Thermal stability of defects in plastically deformed silicon studied by positron lifetime spectroscopy Semicond. Sci. Technol. 27, 3 (2012), 035023 |
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| Tino Rublack, Stefan Hartnauer, Michael Mergner, Markus Muchow, Martin Schade, Hartmut S. Leipner, Gerhard Seifert Mechanism of selective removal of transparent layers on semiconductors using ultrashort laser pulses. Proc. SPIE 8247 (2012), 82470Z |
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| Maurizio Roczen, Enno Malguth, Martin Schade, Andreas Schöpke, Abdelazize Laades, Michael Blech, Orman Gref, Thomas Barthel, Jan Amaru Töfflinger, Manfred Schmidt, Hartmut S. Leipner, Lars Korte, Bernd Rech Comparison of growth methods for Si/SiO2 nanostructures as nanodot heteroemitters for photovoltaic application. J. Non-Cryst. Sol. 358 (2011), 2253-2256 |
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| A. A. Tonkikh, N. D. Zakharov, A. V. Novikov, K. E. Kudryavtsev, V. G. Talalaev, B. Fuhrmann, H. S. Leipner, P. Werner Sb mediated formation of Ge/Si quantum dots: Growth and properties. Thin Sol. Films (2011), |
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| A. Buchsteiner, M. Zenkner, T. Großmann, C. Ehrhardt, M. Diestelhorst, S. Lemm, W. Münchgesang, C. Pientschke, J. Glenneberg, H. Beige, S. G. Ebbinghaus, H. S. Leipner Investigation of 0-3 composites for novel capacitors and energy storage. Proc. SPIE 8102 (2011), 81021A |
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| H.S. Leipner, N. Geyer, F. Syrowatka, H. Cheng, B. Fuhrmann Fabrication of complex structures with an array of nanopinhole cameras. Proc. SPIE 8102 (2011), 81020W |
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| C. Khare, B. Fuhrmann, H. S. Leipner, J. Bauer, B. Rauschenbach Optimized growth of Ge nanorod arrays on Si patterns. .J Vac. Sci. Technol. A 29 (2011), 051501 |
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M. Niepel, B. Fuhrmann, H. S. Leipner, T. Groth Multischichten aus synthetischen und Biopolymeren steuern die Zelladhäsion auf nanostrukturierten Oberflächen. Biomater. 12 (1-4) (2011), 143 |
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| Otwin Breitenstein, Hartmut S. Leipner, Peter Werner (Ed.) 10th International workshop Beam injection Assessment of microstructures in semiconductors. (2011), |
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Otwin Breitenstein, Hartmut S. Leipner Preface. phys. stat. sol. (c) 8, 4 (2011), A7 |
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| I. Ratschinski, H. S. Leipner, F. Heyroth, W. Fränzel, R. Hammer, M. Jurisch Dislocations and cracks at Vickers indentations in GaN and GaAs bulk crystals. phys. stat. sol. (c) 8, 4 (2011), 1325-1329 |
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| Ingmar Ratschinski, Hartmut S. Leipner, Frank Heyroth, Wolfgang Fränzel, Osama Moutanabbir, Ralf Hammer, Manfred Jurisch Indentation-induced dislocations and cracks in (0001) freestanding and epitaxial GaN. J. Phys. Conf. Ser. 281, 1 (2011), 012007 |
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| K. Rothe, M. Stordeur, F. Heyroth, F. Syrowatka, H.S. Leipner Electrical and structural real-time changes in thin thermoelectric (Bi0.15Sb0.85)(2)Te3 films by dynamic thermal treatment. J. Electron. Mater. 39, 9 (2010), 1408-1412 |
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| K. Rothe, M. Stordeur, H. S. Leipner Power factor anisotropy of p-type and n-type conductive thermoelectric Bi-Sb-Te thin films. J. Electron. Mater. 39, 9 (2010), 1395-1398 |
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| I. Ratschinski, H. S. Leipner, F. Heyroth, W. Fränzel, R. Hammer, M. Jurisch Dislocations and cracks at Vickers indentations in (0001) GaN single crystals. Phil. Mag. Lett. 90 (8) (2010), 565-571 |
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| Juergen Reif, Olga Varlamova, Markus Ratzke, Martin Schade, Hartmut S. Leipner, Tzanimir Arguirov Multipulse feedback in self-organized ripples formation upon femtosecond laser ablation from silicon Appl Phys A 101 (2010), 361–365 |
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| M. Schade, O. Varlamova, J. Reif, H. Blumtritt, W. Erfurth, H. S. Leipner High-resolution investigations of ripple structures formed by femtosecond laser irradiation of silicon Anal. Bioanal. Chem. 396 (2010), 1905-1911 |
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| Zhidan Zeng, Xiangyang Ma, Jiahe Chen, Deren Yang, Ingmar Ratschinski, Frank Hevroth, Hartmut S. Leipner Effect of oxygen precipitates on dislocation motion in Czochralski silicon J. Cryst. Growth 312, 2 (2010), 169-173 |
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| Juergen Reif, Olga Varlamova, Mourad Bounhalli, Tzanimir Arguirov, Martin Schade, Hartmut S. Leipner Long-time feedback in self-organized nanostructures formation upon multi-pulse femtosecond laser ablation. Proc SPIE 7586 (2010), 75860H |
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| Katrin Bertram, Matthias Stordeur, Frank Heyroth, Hartmut S. Leipner Dynamic in situ observations of electrical and structural changes in thin thermoelectric (Bi0.15Sb0.85)2Te3 films J. Appl. Phys. 106 (6) (2009), 063711 |
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| Nadine Geyer, Zhipeng Huang, Bodo Fuhrmann, Silko Grimm, Manfred Reiche, Trung-Kien Nguyen-Duc, Johannes de Boor, Hartmut S. Leipner, Peter Werner, Ulrich Gösele Sub-20 nm Si/Ge superlattice nanowires by metal-assisted etching Nano Lett. 9 (9) (2009), 3106-3110 |
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| Martin Schade, Nadine Geyer, Bodo Fuhrmann, Frank Heyroth, Peter Werner, Hartmut S. Leipner High-resolution analytical electron microscopy of silicon nanostructures phys. stat. sol. (c) 6 (3) (2009), 690-695 |
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| Martin Schade, Nadine Geyer, Bodo Fuhrmann, Frank Heyroth, Hartmut S. Leipner High-resolution analytical electron microscopy of catalytically etched silicon nanowires Appl. Phys. A 95 (2009), 325-327 |
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| Ingmar Ratschinski, Frank Heyroth, Wolfgang Fränzel, Hartmut S. Leipner Anisotropy of crack and dislocation formation in GaAs phys. stat. sol. (c) (2009), |
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| C. Patzig, B. Fuhrmann, H. S. Leipner, B. Rauschenbach Silicon nanocolumns on nanosphere lithography templated substrates: Effects of sphere size and
substrate temperature J. Nanosci. Nanotechnol. 8, 12 (2008), 1-7 |
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| C. Patzig, B. Rauschenbach, B. Fuhrmann, H. S. Leipner Growth of Si nanorods in honeycomb and hexagonal-closed-packed arrays using glancing angle deposition J. Appl. Phys. 103 (2008), 024313 |
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| H. S. Leipner, M. Kittler Preface phys. stat. sol. (c) 4, 8 (2007), VIII |
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| H. S. Leipner (Ed.) Proceedings of the International conference on Extended defects in semiconductors (EDS 2006) Weinheim: Wiley-VCH (2007), |
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| M. Schade, F. Heyroth, F. Syrowatka, H. S. Leipner, T. Boeck, M. Hanke Investigation of the chemical composition profile of SiGe/Si(001) islands by analytical transmission electron microscopy Appl. Phys. Lett. 90 (2007), 263101 |
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| J. Bauer, V. Gottschalch, H. Paetzelt, G. Wagner, B. Fuhrmann, H. S. Leipner MOVPE growth and real structure of vertical-aligned GaAs nanowires J. Cryst. Growth 298 (2007), 625-630 |
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M. Schade, F. Heyroth, H. S. Leipner, M. Hanke Combined HRXRD and EELS investigations of SiGe/Si(001) islands grown by means of liquid phase epitaxy. Microsc. Microanal. 13 (2007), Suppl. 3 |
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| J. Zhang, F. Paumier, T. H?che, F. Heyroth, F. Syrowatka,
R. J. Gaboriaud, H. S. Leipner Electron energy-loss spectroscopy investigations of Y2O3 films on Si (001) substrate Thin Sol. Films 496 (2006), 266-272 |
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| H. J. Fan, B. Fuhrmann, R. Scholz, C. Himcinschi, A. Berger, H. Leipner, A. Dadgar, A. Krost, S. Christiansen, U. G?sele, M. Zacharias Vapour-transport-deposition growth of ZnO nanostructures: switch between c-axial wires and a-axial belts by indium doping Nanotechnol. 17 (2006), S231-239 |
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| C. Heiliger, F. Heyroth, F. Syrowatka, H. S. Leipner, I. Maznichenko, K. Kokko, W. Hergert, I. Mertig Orientation-dependent electron-energy-loss spectroscopy of TiO2: A comparison of theory and experiment Phys. Rev. B 73 (2006), 045129 |
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| B. Fuhrmann, H. S. Leipner, H.-R. H?che. L. Schubert, P. Werner, U. G?sele Ordered arrays of silicon nanowires produced by nanosphere lithography and molecular beam epitaxy
Nano Lett. 5, 12 (2005), 2524-2527 |
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| J. Zhang, A. Visinoiu, F. Heyroth, F. Syrowatka, M. Alexe, D. Hesse, H. S. Leipner High-resolution electron energy-loss spectroscopy of BaTiO3/SrTiO3 multilayers Physical Review B 71 (2005), 064108-064114 |
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| H. S. Leipner, H. Lei Diffusion-drift-aggregation model of the interaction of point defects and dislocations in semiconductors phys. stat. sol. (c) 2 (6) (2005), 1859-1863 |
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| R. Krause-Rehberg, H. S. Leipner Positron annihilation in condensed matter Encyclopedia pf physics. Ed. R. G. Lerner, G. L. Trigg. Weinheim: Wiley-VCH 2nd edition (2005), |
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| H.-R. H?che, H. S. Leipner, H. Graener Editorial Scientia halensis 12, 2 (2004), S4 |
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| H. S. Leipner, P. Werner Atome sehen ? Mikroskope f?r kleinste Strukturen Scientia halensis 12, 2 (2004), 9-10 |
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| R. Krause-Rehberg, G. Brauer, H. S. Leipner EPOS ? eine neue intensive Positronenquelle f?r die Materialforschung Scientia halensis 12, 2 (2004), 13-14 |
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| H. S. Leipner Die Objekte sind winzig ? die Chancen riesig
Das Innovationsforum ?Nanostrukturierte Materialien? Scientia halensis 12, 2 (2004), S19 |
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| H. S. Leipner, Z. Wang. H. Gu, V. V. Mikhnovich, V. Bondarenko, R. Krause-Rehberg, J.-L. Demenet, J. Rabier Defects in silicon plastically deformed at room temperature phys. stat. sol. (a) 201, 9 (2004), 2021-2028 |
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| Hartmut S. Leipner, Hans-Reiner Höche (Ed.) Nanostrukturierte Materialien im Blickpunkt der Wissenschaft. Scientia Halensis Martin-Luther-Universität Halle-Wittenberg (2004), |
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| H. S. Leipner, R. Krause-Rehberg Positron annihilation studies of open-volume defects in silicon Progress in silicon materials - From microelectronics to photovoltaics and optoelectronics. Ed. D. Yang. Beijing: Science Press (2004), pp. 202-214 |
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| H. Lei, H. S. Leipner, V. Bondarenko, J. Schreiber Identification of the 0.95 eV luminescence band in n-type GaAs:Si J. Phys. Cond. Mat. 16 (2004), S279-285 |
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| M. R?ssel, H.-R. H?che, H. S. Leipner, D. V?ltzke, H.-P. Abicht, O. Hollricher, J. M?ller, S. Gablenz Raman microscopic investigations of BaTiO3 precursors with core-shell structure Analyt. Bioanalyt. Chem. 380 (2004), 157-162 |
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| Hartmut S. Leipner (Ed.) Innovationsforum Nanostrukturierte Materialien Martin-Luther-Universität Halle-Wittenberg (2003), |
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| H. S. Leipner, V. V. Mikhnovich, V. Bondarenko, Z. Wang. H. Gu, R. Krause-Rehberg, J.-L. Demenet, J. Rabier Positron annihilation of defects in silicon deformed at different temperatures Physica B 340-342 (2003), 617-621 |
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| J. Gebauer, M. Lausmann, F. Redmann, R. Krause-Rehberg, H. S. Leipner, E. R. Weber, P. Ebert Determination of the Gibbs free energy of formation of Ga vacancies in GaAs by positron annihilation Phys. Rev. B 67, 23 (2003), 235207 |
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| D. Lorenz, A. Zeckzer, U. Hilpert, P. Grau, H. Johansen, H. S. Leipner Pop-in effect as homogeneous nucleation of dislocations during nanoindentation Virt. J. Nanoscale Sci. Technol. 7, 20 (2003), |
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| D. Lorenz, A. Zeckzer, U. Hilpert, P. Grau, H. Johansen, H. S. Leipner Pop-in effect as homogeneous nucleation of dislocations during nanoindentation Phys. Rev. B 67 (2003), 172101 |
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| Z. Wang, H. S. Leipner, R. Krause-Rehberg, V. Bodarenko, H. Gu Defects properties in plastically deformed silicon studied by positron lifetime measurements Microelectron. Eng. 66, 1-4 (2003), 358-366 |
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| H. Lei, H. S. Leipner, N. Engler Why are arsenic clusters situated at dislocations in gallium arsenide? Appl. Phys. Lett. 82, 8 (2003), 1218-1220 |
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| H. Lei, H. S. Leipner, J. Schreiber, J. L. Weyher, T. Wosinski, I. Grzegory Raman and cathodoluminescence study of dislocations in GaN J. Appl. Phys. 92, 11 (2002), 6666-6670 |
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| H. Lei, H. S. Leipner, N. Engler, J. Schreiber Interactions of point defects with dislocations in n-type silicon-doped GaAs J. Phys. Cond. Mat. 14 (2002), 7963-7971 |
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| H. S. Leipner, D. Lorenz, A. Zeckzer, H. Lei, P. Grau Nanoindentation pop-in effect in semiconductors Physica B 308-310, 1-4 (2001), 446-449 |
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| H. S. Leipner Wechselwirkungen zwischen Versetzungen und Punktdefekten in Halbleitern Habilitation (2001), |
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| N. Engler, H. S. Leipner, R. F. Scholz, J. Schreiber, P. Werner Interaction of copper and sulfur with dislocations in GaAs Sol. State Phenom. 78-79 (2001), 331-340 |
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| N. Engler, H. S. Leipner, R. F. Scholz, P. Werner, U. G?sele Study of As self-diffusion in GaAs using sulfur as a tracer Physica B 308-310, 1-4 (2001), 742-744 |
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| V. Bondarenko, K. Petters, R. Krause-Rehberg, J. Gebauer, H. S. Leipner Study of vacancy-type defects after Cu diffusion in GaAs Physica B 308-310 (1-4) (2001), 792-795 |
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| T. E. M. Staab, M. J. Puska, M. Hakkala, A. Sieck, M. Haugk, T. Frauenheim, H. S. Leipner Irradiation experiment revisited - Stability and positron lifetime of large vacancy clusters in silicon Mater. Sci. Forum 363-365 (2001), 135-137 |
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| H. S. Leipner, C. G. H?bner, T. E. M. Staab, R. Krause-Rehberg Open volume defects in plastically deformed semiconductors Mater. Sci. Forum 363-365 (2001), 61-63 |
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| K. Petters, J. Gebauer, F. Redmann, H. S. Leipner, R. Krause-Rehberg Formation of vacancy clusters during copper diffusion in semiinsulating GaAs Mater. Sci. Forum 363-365 (2001), 111-113 |
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H. S. Leipner, D. Lorenz, A. Zeckzer, and P. Grau Dislocation-related pop-in effect in gallium arsenide physica status solidi (a) 183, 2 (2001), R4-6 |
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| H. S. Leipner, C. G. H?bner, T. E. M. Staab, M. Haugk , A. Sieck, R. Krause-Rehberg, T. Frauenheim Vacancy clusters in plastically deformed semiconductors J. Phys.: Condens. Matter 12 (2000), 10071-10078 |
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| R. F. Scholz, P. Werner, U. G?sele, N. Engler, H. S. Leipner Determination of arsenic diffusion parameters by sulfur indiffusion in gallium arsenide J. Appl. Phys. 88,12 (2000), 7045-7050 |
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| M. Haugk, J. Elsner, T. Frauenheim, T. E. M. Staab, C. D. Latham, R. Jones, H. S. Leipner, T. Heine, G. Seifert, M. Sternberg Structures, energetics and electronic properties of complex III-V semiconductor systems phys. stat. sol. (b) 217,1 (2000), 473-511 |
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| H. S. Leipner, C. G. H?bner, P. Grau, R. Krause-Rehberg Defect investigations in plastically deformed gallium arsenide Physica B 273-274 (1999), 710-713 |
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| H. S. Leipner, R. F. Scholz, N. Engler, F. B?rner, P. Werner, U. G?sele Diffusivity of arsenic interstitials in GaAs studied by sulfur in-diffusion Physica B 273-274 (1999), 697-700 |
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| T. E. M. Staab, M. Haugk, A. Sieck, T. Frauenheim, H. S. Leipner Magic number vacancy aggregates in Si and GaAs - structure and positron lifetime studies Physica B 273-274 (1999), 501-504 |
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| T. E. M. Staab, M. Haugk, T. Frauenheim, H. S. Leipner Magic number vacancy aggregates in GaAs: Structure and positron lifetime studies Phys. Rev. Lett. 83, 26 (1999), 5519-5522 |
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| H. S. Leipner, R. F. Scholz, F. Syrowatka, J. Schreiber, P. Werner Copper diffusion in dislocation-rich gallium arsenide Phil. Mag. A 79,11 (1999), 2785-2802 |
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| R. Krause-Rehberg, H. S. Leipner Positron annihilation in semiconductors Berlin: Springer-Verlag ISBN 3-540-64371-0 (1999), Springer series in solid-state sciences 127 |
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| N. Engler, H. S. Leipner, R. F. Scholz, P. Werner, F. Syrowatka, J. Schreiber, U. G?sele Investigations of extended defects after sulfur diffusion in GaAs Sol. State Phen. 69-70 (1999), 443-448 |
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| H. S. Leipner, C. Hübner, T. E. M. Staab, M. Haugk, R. Krause-Rehberg Positron annihilation at dislocations and related point defects in semiconductors phys. stat. sol. (a) 171 (1999), 377-382 |
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| J. Schreiber, L. H?ring, H. Uniewski, S. Hildebrandt, H. S. Leipner Recognition and distribution of A(g) and B(g) dislocations in indentation zones on {111} and {110} surfaces of CdTe phys. stat. sol. (a) 171 (1999), 89-97 |
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R. Krause-Rehberg, H. S. Leipner, A. Polity, F. Rudolf, R. Hammer, M. Jurisch Mechanical damage in GaAs wafers introduced by a diamond saw: A study by means of positron annihilation and electron microscopy phys. stat. sol. (a) 158,2 (1998), 377-383 |
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| S. Hildebrandt, J. Schreiber, W. Hergert, H. Uniewski, H. S. Leipner Theoretical fundamentals and experimental materials and defect studies using quantitative scanning electron microscopy-cathodoluminescence/electron beam induced current on compound semiconductors Scanning Microsc. Intern. 12, 4 (1998), 535-552 |
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| R. Krause-Rehberg, H. S. Leipner, T. Abgarjan, A. Polity Review of defect investigations by means of positron annihilation in II-VI compound semiconductors Appl. Phys. A 66 (1998), 599-614 |
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J. Schreiber, H. Uniewski, S. Hildebrandt, L. H?ring, H. S. Leipner Distinction of the recombination properties and identification of Y luminescence at glide dislocations in CdTe Inst. Phys. Conf. Ser. 157 (1997), 651-654 |
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S. Hildebrandt, H. Uniewski, J. Schreiber, H. S. Leipner Localization of Y luminescence at glide dislocations in cadmium telluride J. Physique III 7, 7 (1997), 1505-1514 |
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| H. S. Leipner, R. Scholz, F. Syrowatka, H. Uniewski, J. Schreiber Interaction of copper with dislocations in GaAs J. Physique III 7, 7 (1997), 1495-1503 |
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| R. Krause-Rehberg, H. S. Leipner Determination of absolute vacancy concentrations in semiconductors by means of positron annihilation Appl. Phys. A 64 (1997), 457-466 |
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H. S. Leipner, C. H?bner, R. Krause-Rehberg Study of plastically deformed semiconductors by means of positron annihilation Mater. Sci. Forum 258-263 (1997), 981-986 |
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H. S. Leipner, R. Scholz, F. Syrowatka, P. Werner, K. D. Schicke, J. Schreiber Copper diffusion in plastically deformed GaAs Inst. Phys. Conf. Ser. 160 (1997), 87-90 |
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| E. A. Steinman, H. S. Leipner, H. G. Grimmeiss The magnesium related luminescence in silicon and its quenching due to the presence of dislocations Sol. State Phen. 57-58 (1997), 313-318 |
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C. H?bner, H. S. Leipner, R. Krause-Rehberg Deformation induced defects in GaAs-The role of dislocations Mater. Sci. Forum 255-257 (1997), 497-499 |
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| H. S. Leipner, J. Schreiber, H. Uniewski, S. Hildebrandt Dislocation luminescence in cadmium telluride Scanning Microsc. Intern. 11, 1 (1997), 149-160 |
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H. Uniewski, J. Schreiber, S. Hildebrandt, H. S. Leipner SEM CL studies on polar glide dislocations in CdTe Mater. Sci. Eng. B 42 (1996), 313-316 |
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| H. S. Leipner, R. Scholz, F. Syrowatka, H. Uniewski, J. Schreiber Study of copper aggregations at dislocations in GaAs Mater. Sci. Eng. B 42 (1996), 186-189 |
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F. Syrowatka, R. Scholz, H. Uniewski, J. Schreiber, H. S. Leipner Wechselwirkung von Kupfer mit Versetzungen in GaAs In: Rasterelektronenmikroskopie in der Materialpr?fung. Berlin: Deutscher Verband f?r Materialforschung und -pr?fung (1996), 287-292 |
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C. H?bner, H. S. Leipner, O. Storbeck, R. Krause-Rehberg Defect characterization in plastically deformed undoped gallium arsenide In: The physics of semiconductors. Ed. M. Scheffler, R. Zimmermann. Singapore: World Scientific 4 (1996), 2805-2808 |
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H. S. Leipner, C. H?bner, O. Storbeck, A. Polity, R. Krause-Rehberg Defect characterization in plastically deformed undoped gallium arsenide In: Semiconducting and insulating materials 1996. Piscataway: IEEE 1996 (1996), 283-286 |
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| C. G. H?bner, T.Staab, H. S. Leipner TEM studies of the microstructure of pressureless sintered copper phys. stat. sol. (a) 150 (1995), 653-660 |
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| H. S. Leipner, R. Krause-Rehberg, C. H?bner Generation of point defects during plastic deformation of InP Mater. Sci. Forum 196-201 (1995), 1267-1272 |
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| T. Sekiguchi, H. S. Leipner Damage-induced luminescence in InP Appl. Phys. Lett. 67, 25 (1995), 3777-3779 |
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TILL MÄLZER, LENA MATHIES, TINO BAND, ROBERT GORGAS, HARTMUT S. LEIPNER Influence of Different Solvents and High-Electric-Field Cycling on Morphology and Ferroelectric Behavior of Poly(Vinylidene Fluoride-Hexafluoropropylene) Films (0), |
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