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Martin-Luther-University
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
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10 | 20 | 30 | 40 | 50 | 60 | 70 | 80 | 90 | 100 |110 | 120 | 130 | 140 | 143 | All
 | H. Lei, H. S. Leipner, N. Engler, J. Schreiber
Interactions of point defects with dislocations in n-type silicon-doped GaAs
J. Phys. Cond. Mat. 14 (2002), 7963-7971 |
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| H. S. Leipner, D. Lorenz, A. Zeckzer, H. Lei, P. Grau
Nanoindentation pop-in effect in semiconductors
Physica B 308-310, 1-4 (2001), 446-449 |
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| H. S. Leipner
Wechselwirkungen zwischen Versetzungen und Punktdefekten in Halbleitern
Habilitation (2001), |
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| N. Engler, H. S. Leipner, R. F. Scholz, J. Schreiber, P. Werner
Interaction of copper and sulfur with dislocations in GaAs
Sol. State Phenom. 78-79 (2001), 331-340 |
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| N. Engler, H. S. Leipner, R. F. Scholz, P. Werner, U. G?sele
Study of As self-diffusion in GaAs using sulfur as a tracer
Physica B 308-310, 1-4 (2001), 742-744 |
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| V. Bondarenko, K. Petters, R. Krause-Rehberg, J. Gebauer, H. S. Leipner
Study of vacancy-type defects after Cu diffusion in GaAs
Physica B 308-310 (1-4) (2001), 792-795 |
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| T. E. M. Staab, M. J. Puska, M. Hakkala, A. Sieck, M. Haugk, T. Frauenheim, H. S. Leipner
Irradiation experiment revisited - Stability and positron lifetime of large vacancy clusters in silicon
Mater. Sci. Forum 363-365 (2001), 135-137 |
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| H. S. Leipner, C. G. H?bner, T. E. M. Staab, R. Krause-Rehberg
Open volume defects in plastically deformed semiconductors
Mater. Sci. Forum 363-365 (2001), 61-63 |
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| K. Petters, J. Gebauer, F. Redmann, H. S. Leipner, R. Krause-Rehberg
Formation of vacancy clusters during copper diffusion in semiinsulating GaAs
Mater. Sci. Forum 363-365 (2001), 111-113 |
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H. S. Leipner, D. Lorenz, A. Zeckzer, and P. Grau
Dislocation-related pop-in effect in gallium arsenide
physica status solidi (a) 183, 2 (2001), R4-6 |
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10 | 20 | 30 | 40 | 50 | 60 | 70 | 80 | 90 | 100 |110 | 120 | 130 | 140 | 143 | All
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