Interdisziplinäres Zentrum für Materialwissenschaften
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Martin-Luther-University
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
Phone: +49 345 55 28471
Telefax:+49 345 55 27390 e-mail: info@cmat.uni-halle.de
[Papers] [Theses] [Reports] [Posters]
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abstractZ. Wang, H. S. Leipner, R. Krause-Rehberg, V. Bodarenko, H. Gu
Defects properties in plastically deformed silicon studied by positron lifetime measurements
Microelectron. Eng. 66, 1-4 (2003), 358-366
 
abstractH. Lei, H. S. Leipner, N. Engler
Why are arsenic clusters situated at dislocations in gallium arsenide?
Appl. Phys. Lett. 82, 8 (2003), 1218-1220
 
abstractH. Lei, H. S. Leipner, J. Schreiber, J. L. Weyher, T. Wosinski, I. Grzegory
Raman and cathodoluminescence study of dislocations in GaN
J. Appl. Phys. 92, 11 (2002), 6666-6670
 
abstractH. Lei, H. S. Leipner, N. Engler, J. Schreiber
Interactions of point defects with dislocations in n-type silicon-doped GaAs
J. Phys. Cond. Mat. 14 (2002), 7963-7971
 
abstractH. S. Leipner, D. Lorenz, A. Zeckzer, H. Lei, P. Grau
Nanoindentation pop-in effect in semiconductors
Physica B 308-310, 1-4 (2001), 446-449
 
abstractH. S. Leipner
Wechselwirkungen zwischen Versetzungen und Punktdefekten in Halbleitern
Habilitation (2001),
 
abstractN. Engler, H. S. Leipner, R. F. Scholz, J. Schreiber, P. Werner
Interaction of copper and sulfur with dislocations in GaAs
Sol. State Phenom. 78-79 (2001), 331-340
 
abstractN. Engler, H. S. Leipner, R. F. Scholz, P. Werner, U. G?sele
Study of As self-diffusion in GaAs using sulfur as a tracer
Physica B 308-310, 1-4 (2001), 742-744
 
abstractV. Bondarenko, K. Petters, R. Krause-Rehberg, J. Gebauer, H. S. Leipner
Study of vacancy-type defects after Cu diffusion in GaAs
Physica B 308-310 (1-4) (2001), 792-795
 
abstractT. E. M. Staab, M. J. Puska, M. Hakkala, A. Sieck, M. Haugk, T. Frauenheim, H. S. Leipner
Irradiation experiment revisited - Stability and positron lifetime of large vacancy clusters in silicon
Mater. Sci. Forum 363-365 (2001), 135-137
 
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