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Martin-Luther-University
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
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 | W. Leitenberger, C. Eisenschmidt, H.-R. H?che
Lithium fluoride transmission phase retarder for X-rays
J. Appl. Cryst. 30 (1997), 164-170 |
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| E. A. Steinman, H. S. Leipner, H. G. Grimmeiss
The magnesium related luminescence in silicon and its quenching due to the presence of dislocations
Sol. State Phen. 57-58 (1997), 313-318 |
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C. H?bner, H. S. Leipner, R. Krause-Rehberg
Deformation induced defects in GaAs-The role of dislocations
Mater. Sci. Forum 255-257 (1997), 497-499 |
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| H. S. Leipner, J. Schreiber, H. Uniewski, S. Hildebrandt
Dislocation luminescence in cadmium telluride
Scanning Microsc. Intern. 11, 1 (1997), 149-160 |
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H. Uniewski, J. Schreiber, S. Hildebrandt, H. S. Leipner
SEM CL studies on polar glide dislocations in CdTe
Mater. Sci. Eng. B 42 (1996), 313-316 |
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| H. S. Leipner, R. Scholz, F. Syrowatka, H. Uniewski, J. Schreiber
Study of copper aggregations at dislocations in GaAs
Mater. Sci. Eng. B 42 (1996), 186-189 |
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Schneider R., Syrowatka F., R?der A., Abicht H.-P., Woltersdorf J.
Identification of barium titanate phases by ELNES fingerprints
XI Europ. Congr. on Microscopy, Dublin 1996, Proc. CD-ROM T11-34 (1996), |
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F. Syrowatka, R. Scholz, H. Uniewski, J. Schreiber, H. S. Leipner
Wechselwirkung von Kupfer mit Versetzungen in GaAs
In: Rasterelektronenmikroskopie in der Materialpr?fung. Berlin: Deutscher Verband f?r Materialforschung und -pr?fung (1996), 287-292 |
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C. H?bner, H. S. Leipner, O. Storbeck, R. Krause-Rehberg
Defect characterization in plastically deformed undoped gallium arsenide
In: The physics of semiconductors. Ed. M. Scheffler, R. Zimmermann. Singapore: World Scientific 4 (1996), 2805-2808 |
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H. S. Leipner, C. H?bner, O. Storbeck, A. Polity, R. Krause-Rehberg
Defect characterization in plastically deformed undoped gallium arsenide
In: Semiconducting and insulating materials 1996. Piscataway: IEEE 1996 (1996), 283-286 |
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