Organization |
|
|
|
|
Activities |
|
|
|
|
|
|
|
|
|
|
Contact |
|
|
|
|
|
|
Offers for students |
|
|
|
|
Departments |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Martin-Luther-University
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
|
|
10 | 20 | 30 | 40 | 50 | 60 | 70 | 80 | 90 | 100 | 110 | 120 | 130 | 140 | 150 | 160 | 170 | 180 | 190 | 200 | 210 | 220 | 230 | 240 | 250 | 260 | 270 | 280 | 290 | 300 | 310 | 320 | 330 | 340 | 350 | 360 | 370 | 380 | 390 | 400 | 410 | 420 | 430 | 440 | 450 |456 | All
|
F. Syrowatka, R. Scholz, H. Uniewski, J. Schreiber, H. S. Leipner Wechselwirkung von Kupfer mit Versetzungen in GaAs In: Rasterelektronenmikroskopie in der Materialpr?fung. Berlin: Deutscher Verband f?r Materialforschung und -pr?fung (1996), 287-292 |
|
|
C. H?bner, H. S. Leipner, O. Storbeck, R. Krause-Rehberg Defect characterization in plastically deformed undoped gallium arsenide In: The physics of semiconductors. Ed. M. Scheffler, R. Zimmermann. Singapore: World Scientific 4 (1996), 2805-2808 |
|
|
H. S. Leipner, C. H?bner, O. Storbeck, A. Polity, R. Krause-Rehberg Defect characterization in plastically deformed undoped gallium arsenide In: Semiconducting and insulating materials 1996. Piscataway: IEEE 1996 (1996), 283-286 |
|
| C. G. Hübner, T.Staab, H. S. Leipner TEM studies of the microstructure of pressureless sintered copper phys. stat. sol. (a) 150 (1995), 653-660 |
|
| H. S. Leipner, R. Krause-Rehberg, C. H?bner Generation of point defects during plastic deformation of InP Mater. Sci. Forum 196-201 (1995), 1267-1272 |
|
| T. Sekiguchi, H. S. Leipner Damage-induced luminescence in InP Appl. Phys. Lett. 67, 25 (1995), 3777-3779 |
|
10 | 20 | 30 | 40 | 50 | 60 | 70 | 80 | 90 | 100 | 110 | 120 | 130 | 140 | 150 | 160 | 170 | 180 | 190 | 200 | 210 | 220 | 230 | 240 | 250 | 260 | 270 | 280 | 290 | 300 | 310 | 320 | 330 | 340 | 350 | 360 | 370 | 380 | 390 | 400 | 410 | 420 | 430 | 440 | 450 |456 | All
|
|
|
|