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Martin-Luther-University
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
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 | G. Dlubek, V. Bondarenko, J. Pionteck, D. Kilburn, G. Pompe, C. Taesler, F. Redmann, K. Petters, R. Krause-Rehberg, M. A. Alam
Studies of interdiffusion in polymer blends by PALS
Rad. Phys. Chem. 68 (2003), 369-373 |
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| M. Mohsen, R. Krause-Rehberg, A. M. Massoud, H. T. Langhammer
Donor-doping effect in BaTiO3 ceramics using positron annihilation spectroscopy
Rad. Phys. Chem. 68 (2003), 549-552 |
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| G. Dlubek, M. Supej, V. Bondarenko, J. Pionteck, G. Pompe, R. Krause-Rehberg, I. Emri
Otho-positronium lifetime distribution analyzed with MELT and LT and free volume in poly(e-caprolactone) during glass transition, melting, and crystallization
J. Polym. Sci. B: Polym. Phys. 41 (2003), 3077-3088 |
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| G. Dlubek, V. Bondarenko, J. Pionteck, M. Supej, A. Wutzler, R. Krause-Rehberg
Free volume in two differently plasticized poly(vinyl chloride)s: a positron lifetime and PVT study
Polymer 44 (2003), 1921-1926 |
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| H. Lei, H. S. Leipner, J. Schreiber, J. L. Weyher, T. Wosinski, I. Grzegory
Raman and cathodoluminescence study of dislocations in GaN
J. Appl. Phys. 92, 11 (2002), 6666-6670 |
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| J. Gebauer, R. Krause-Rehberg, M. Prokesch, K. Irmscher
Identification and quantitative evaluation of compensating Zn-vacancy-donor complexes in ZnSe by positron annihilation
Phys. Rev. B 66 (2002), 115206 |
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| R. Krause-Rehberg, F. B?rner, F. Redmann, W. Egger, G. K?gel, P. Sperr, W. Triftsh?user
Improved defect profiling with slow positrons
Appl. Surf. Sci. 194 (2002), 210-213 |
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| H. Lei, H. S. Leipner, N. Engler, J. Schreiber
Interactions of point defects with dislocations in n-type silicon-doped GaAs
J. Phys. Cond. Mat. 14 (2002), 7963-7971 |
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| M. Ueltzen, I. Martinek, F. Syrowatka, U. Floegel-Delor, T. Riedel
Soldered Ohmic contacts to superconductors for high-current applications
Phys. C 372-376 (2002), 1653-1656 |
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| H. S. Leipner, D. Lorenz, A. Zeckzer, H. Lei, P. Grau
Nanoindentation pop-in effect in semiconductors
Physica B 308-310, 1-4 (2001), 446-449 |
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