Interdisziplinäres Zentrum für Materialwissenschaften
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Martin-Luther-University
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
Phone: +49 345 55 28471
Telefax:+49 345 55 27390 e-mail: info@cmat.uni-halle.de
[Papers] [Theses] [Reports] [Posters]
[with selected papers from user groups]   [IZM-Labs only]
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abstractH. S. Leipner, P. Werner
Atome sehen ? Mikroskope f?r kleinste Strukturen
Scientia halensis 12, 2 (2004), 9-10
 
abstractR. Krause-Rehberg, G. Brauer, H. S. Leipner
EPOS ? eine neue intensive Positronenquelle f?r die Materialforschung
Scientia halensis 12, 2 (2004), 13-14
 
abstractH. S. Leipner
Die Objekte sind winzig ? die Chancen riesig
Das Innovationsforum ?Nanostrukturierte Materialien?

Scientia halensis 12, 2 (2004), S19
 
abstractH. S. Leipner, Z. Wang. H. Gu, V. V. Mikhnovich, V. Bondarenko, R. Krause-Rehberg, J.-L. Demenet, J. Rabier
Defects in silicon plastically deformed at room temperature
phys. stat. sol. (a) 201, 9 (2004), 2021-2028
 
abstractHartmut S. Leipner, Hans-Reiner Höche (Ed.)
Nanostrukturierte Materialien im Blickpunkt der Wissenschaft.
Scientia Halensis Martin-Luther-Universität Halle-Wittenberg (2004),
 
abstractG. Seifert, M. Kaempfe, F. Syrowatka, C. Harnagea, D. Hesse ,H. Graener
Self-organized structure formation on the bottom of femtosecond laser ablation craters in glass
Applied Physics A Online First (2004),
 
abstractH. S. Leipner, R. Krause-Rehberg
Positron annihilation studies of open-volume defects in silicon
Progress in silicon materials - From microelectronics to photovoltaics and optoelectronics. Ed. D. Yang. Beijing: Science Press (2004), pp. 202-214
 
abstractM.Hanke, M.Schmidbauer, R.K?hler, F.Syrowatka, A.-K.Gerlitzke, T.Boeck
Equilibrium shape of SiGe Stranski-Krastanow islands on silicon grown by liquid phase epitaxy
Appl. Phys. Lett. 84 (2004), 5228-5230
 
abstractL. Schubert, P. Werner, N. D. Zakharov, G. Gerth, F. M. Kolb, L. Long, U. G?sele, T. Y. Tan
Silicon nanowhiskers grown on <111>Si substrates by molecular-beam epitaxy
Appl. Phys. Lett. 84, 24 (2004), 4968-4970
 
abstractH. Lei, H. S. Leipner, V. Bondarenko, J. Schreiber
Identification of the 0.95 eV luminescence band in n-type GaAs:Si
J. Phys. Cond. Mat. 16 (2004), S279-285
 
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