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Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
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H. Lei, H. S. Leipner, V. Bondarenko, J. Schreiber
Identification of the 0.95 eV luminescence band in n-type GaAs:Si
J. Phys. Cond. Mat. 16 (2004), S279-285

The luminescence band at 0.95 eV has been identified as originating from the transition within (SiGaVGaSiGa) complexes by comparing cathodoluminescence and positron annihilation spectra. The upper and lower energy levels of the molecule-like defect complexes are suggested to lie at 22 meV below the conduction band and at about 0.5 eV above the valence band, respectively.
© Institute of Physics Publishing

Keywords: dislocations; cathodoluminescence; vacancies; complexes; gallium arsenide; positron annihilation; energy levels

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