Interdisziplinäres Zentrum für Materialwissenschaften
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Martin-Luther-University
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
Phone: +49 345 55 28471
Telefax:+49 345 55 27390 e-mail: info@cmat.uni-halle.de
[Papers] [Theses] [Reports] [Posters]
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abstractI. Eckardt, S. Henning, F. Syrowatka, R. Gerlach, H. J. Hein
Mechanical changes of bone caused by X-ray radiation of low doses
Der Radiologe 41 (2001), 695-699
 
abstractH. S. Leipner
Wechselwirkungen zwischen Versetzungen und Punktdefekten in Halbleitern
Habilitation (2001),
 
abstractF. Heyroth, J. Zellner, H.-R. H?che, C. Eisenschmidt, E. Weckert, M. Drakopoulous
Pinhole topography in the three-beam case of x-ray diffraction - experiment and theory
J. Phys. D: Appl. Phys. 34, 10A (2001), 151-157
 
abstractH. Lei
Melting of free copper clusters
J. Phys.: Condens. Matter 13,13 (2001), 3023-3030
 
abstractN. Engler, H. S. Leipner, R. F. Scholz, J. Schreiber, P. Werner
Interaction of copper and sulfur with dislocations in GaAs
Sol. State Phenom. 78-79 (2001), 331-340
 
abstractK. Edelmann, M. Janich, E. Hoinkis, W. Pyckhout-Hintzen, S. H?ring
The aggregation behavior of poly(ethylene oxide)-poly(methyl methacrylate) diblock copolymers in organic solvents
Macromol. Chem. Phys. 202, 9 (2001), 1638-1644
 
abstractN. Engler, H. S. Leipner, R. F. Scholz, P. Werner, U. G?sele
Study of As self-diffusion in GaAs using sulfur as a tracer
Physica B 308-310, 1-4 (2001), 742-744
 
abstractV. Bondarenko, K. Petters, R. Krause-Rehberg, J. Gebauer, H. S. Leipner
Study of vacancy-type defects after Cu diffusion in GaAs
Physica B 308-310 (1-4) (2001), 792-795
 
abstractT. E. M. Staab, M. J. Puska, M. Hakkala, A. Sieck, M. Haugk, T. Frauenheim, H. S. Leipner
Irradiation experiment revisited - Stability and positron lifetime of large vacancy clusters in silicon
Mater. Sci. Forum 363-365 (2001), 135-137
 
abstractH. S. Leipner, C. G. H?bner, T. E. M. Staab, R. Krause-Rehberg
Open volume defects in plastically deformed semiconductors
Mater. Sci. Forum 363-365 (2001), 61-63
 
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