Interdisziplinäres Zentrum für Materialwissenschaften
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Martin-Luther-University
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
Phone: +49 345 55 28471
Telefax:+49 345 55 27390 e-mail: info@cmat.uni-halle.de
[Papers] [Theses] [Reports] [Posters]
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abstractM. Hanke, T.Boeck, A.-K. Gerlitzke, F.Syrowatka, F. Heyroth
Unidirectional self-assembling of SiGe Stranski-Krastanow islands on Si(113)
Appl. Phys. Lett. 86 (2005), 223109
 
abstractH.-R. Höche
Nachruf auf Otto Brümmer
Phys. J. 6 (2005), 60
 
abstractM.Hanke, E.G.Kessler
Precise lattice parameter comparison of highly perfect silicon crystals
J. Phys. D, Appl. Phys. 38 (2005), A117
 
abstractM.Hanke, T.Boeck, A.-K.Gerlitzke, F.Syrowatka, F.Heyroth, R.K?hler
Size, shape and ordering of LPE-SiGe/Si(001) islands grown under far non-equilibrium growth conditions
Appl. Phys. Lett. 86 (2005), 142101
 
abstractK.Fujii, A.Waseda, N.Kuramoto, S.Mizushima, P.Becker, H.Bettin, A.Nicolaus, U.Kuetgens, S.Valkiers, P.Taylor, G.Mana, E.Massa, R.Matyi, E.Kessler, M.Hanke
Present status of the Avogadro constant determination from silicon crystals with natural isotopic composition
IEEE Trans. Instrum. Meas. 84 (2005), 854
 
abstractM.Schmidbauer, M.Hanke, R.K?hler
Asymmetric Correlation Function Describing the Positional Ordering of LPE SiGe Nanoscale Islands
Phys. Rev. B 71 (2005), 115323
 
abstractM.Schmidbauer, D.Grigoriev, M.Hanke, P.Sch?fer, T.Wiebach, R.K?hler
Effects of Grazing Incidence on the X-Ray Diffuse Scattering from Self-Assembled Nanoscale Islands
Phys. Rev. B 71 (2005), 115324
 
abstractJ. Zhang, A. Visinoiu, F. Heyroth, F. Syrowatka, M. Alexe, D. Hesse, H. S. Leipner
High-resolution electron energy-loss spectroscopy of BaTiO3/SrTiO3 multilayers
Physical Review B 71 (2005), 064108-064114
 
unfortunately no abstract available A. Kiersnowski, P. Dabrowski, H. Budde, J. Kressler, J. Piglowski
Synthesis and structure of poly(e-caprolactone)/synthetic montmorillonite nano-intercalates
Europ. Polym. J. 40 (2005), 2591-2598
 
abstractH. S. Leipner, H. Lei
Diffusion-drift-aggregation model of the interaction of point defects and dislocations in semiconductors
phys. stat. sol. (c) 2 (6) (2005), 1859-1863
 
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