Interdisziplinäres Zentrum für Materialwissenschaften
  Publications [search]   
Organization
Activities
Contact
Offers for students
Departments
Martin-Luther-University
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
Phone: +49 345 55 28471
Telefax:+49 345 55 27390 e-mail: info@cmat.uni-halle.de
[Papers] [Theses] [Reports] [Posters]
10 | 20 | 30 | 40 | 50 | 60 | 70 | 80 | 90 | 100 | 110 | 120 | 130 | 140 | 150 | 160 | 170 | 180 | 190 | 200 | 210 | 220 | 230 | 240 | 250 | 260 | 270 | 280 | 290 | 300 | 310 | 320 | 330 |340 | 350 | 360 | 370 | 380 | All
abstractH. S. Leipner, R. F. Scholz, N. Engler, F. B?rner, P. Werner, U. G?sele
Diffusivity of arsenic interstitials in GaAs studied by sulfur in-diffusion
Physica B 273-274 (1999), 697-700
 
abstractT. E. M. Staab, M. Haugk, A. Sieck, T. Frauenheim, H. S. Leipner
Magic number vacancy aggregates in Si and GaAs - structure and positron lifetime studies
Physica B 273-274 (1999), 501-504
 
abstractT. E. M. Staab, M. Haugk, T. Frauenheim, H. S. Leipner
Magic number vacancy aggregates in GaAs: Structure and positron lifetime studies
Phys. Rev. Lett. 83, 26 (1999), 5519-5522
 
abstractH. S. Leipner, R. F. Scholz, F. Syrowatka, J. Schreiber, P. Werner
Copper diffusion in dislocation-rich gallium arsenide
Phil. Mag. A 79,11 (1999), 2785-2802
 
abstractJ. Neumann-Zdralek
Elektronenmikroskopische Untersuchungen zur Fresnoitbildung in Bariumtitanatkeramik
Dissertation (1999),
 
abstractR. Krause-Rehberg, H. S. Leipner
Positron annihilation in semiconductors
Berlin: Springer-Verlag ISBN 3-540-64371-0 (1999), Springer series in solid-state sciences 127
 
unfortunately no abstract available E. Langer, S. D?britz, A. R?der, W. Hauffe
Studies of polycrystalline materials by Pseudo Kossel technique
Fresenius J. Anal. Chem. 365 (1999), 212-216
 
abstractN. Engler, H. S. Leipner, R. F. Scholz, P. Werner, F. Syrowatka, J. Schreiber, U. G?sele
Investigations of extended defects after sulfur diffusion in GaAs
Sol. State Phen. 69-70 (1999), 443-448
 
abstractF. Heyroth, H.-R. H?che and C. Eisenschmidt
Contrast in X-ray section topographs of perfect silicon crystals using the Laue-Laue three-beam case of diffraction
J. Appl. Cryst. 32 (1999), 489-496
 
abstractF. Heyroth, H.-R. H?che and C. Eisenschmidt
Imaging of the energy flow in the three-beam case of X-ray diffraction
J. Phys. D: Appl. Phys. 32 (1999), A133-138
 
10 | 20 | 30 | 40 | 50 | 60 | 70 | 80 | 90 | 100 | 110 | 120 | 130 | 140 | 150 | 160 | 170 | 180 | 190 | 200 | 210 | 220 | 230 | 240 | 250 | 260 | 270 | 280 | 290 | 300 | 310 | 320 | 330 |340 | 350 | 360 | 370 | 380 | All


Impressum Copyright © Center of Materials Science, Halle, Germany. All rights reserved.