The Center of Materials Science is equipped with dedicated analytical tools, which allow the study of different materials. The following methods are available in the center:

• Low-voltage electron microscopy (Zeiss Gemini 500) in combination with EDX (Oxford Ultim Max & Oxford Extreme) and EBSD (Oxford C-Nano)
  Field emission scanning electron microscope for high-resolution surface imaging even with low primary electron energies: 0,05…30 kV, beam diameter 1 nm @ 500V, 0.9 nm @ 1 kV; variable pressure mode to reduce sample charging; Highly efficient EDX detector (SDD) with element detection up to lithium
• Enviromental scanning electron microscopy (Phillips XL30 ESEM FEG)
  Field emission scanning electron microscope for the surface imaging of samples even in a gas atmosphere (ESEM mode), primary electron energy: 0,5…30 kV, beam diameter: 2 nm @ 30 kV, 5nm @ 1 kV, pressure range: high vacuum or 0,3…10 Torr (ESEM), Temperature range: -5…60 °C; EDX (EDAX-SiLi-Detektor)
• Combined scanning electron microscopy with focused ion beam (FEI Versa 3D) [*]
  Universal focused ion beam device for nanopreparation and inspection; Schottky field emitter cathode 0,2…30 kV; High current ion column with Ga ion source: 0.5..30kV bei 0.6pA...60nA, 7 nm ion beam resolution at 30 kV; in-situ micromanipulator; GIS system for the deposition of C, Pt, W; EDX (EDAX Octane Elite)
• Transmission electron microscopy (Zeiss LEO 912) [*]
  Imaging transmission electron microscope with energy filter and LaB6 cathode, primary beam energy: 80…120 keV, 2k slow scan CCD camera, point resolution 3.7 Å (TEM mode)
• Classical TEM & SEM praparation of hard condensed matter
  Thread saws, ultrasonic drills, grinding and polishing devices, dimplers;
  Ar ion etcher (Precision Ion Polishing System Gatan 691);
  Carbon coating (Cressington 208 carbon coater); Metal coating (Cressington 208HR sputter coater);
  Combined etching and coating system for polishing and exposing surfaces, slope etching process, high-resolution in-situ ion sputter coating (Gatan Precision Etching and Coating System PECS)
• Light microscopy and image processing
  Light microscopes with cameras for bright field, dark field and polarization microscopy in connection with an SIS analysis image processing system, differential interference contrast, extended focal imaging, objectives 5x...100x (Leica DM RXE & Zeiss Auflichtmikroskop Axio Imager)
• Electrical measurements
  Tip measuring station with micromanipulators for resistance measurement on microstructures, four-point method

* in cooperation with the ZIK SiliNano and the Institute of Physics

• 200 m² cleanroom of class 100
  Wet benches with heatable quartz and plastic basins for cleaning, processing and drying 4", 6" and 8" wafers, heating plates and spin coaters

• Raman microscopy (Dilor LabRam)
  Determination of the chemical composition, crystallinity, doping, relaxation etc. of Raman-active samples; Excitation laser: 633 nm, spatial resolution: 1…10 µm, spectral resolution: 2…6 cm-1
• Atomic Force Microscopy (Pacific Nanotechnology Nano-R & DME Nanotechnologie DS95-50)
  Multimode-AFM (contact mode, close contact modes, phase contrast, STM-mode), Imaging of atormar steps, SNOM extension
• Spectroscopic ellipsometry (J.A. Woollam M-2000V)
  For the determination of layer thickness, homogeneity, roughness and complex refractive index of thin single and multi-layers, wavelength 370…1000 nm
• Glow Discharge Optical Emission Spectroscopy GDOES (Spectruma GDA 750 HR) [*]
  Glow discharge spectrometer with DC and pulsed HF plasma generator for element analysis in the depth profile. Diameter of the measuring spot 2.5 mm². Optical spectrometer for the detection of the element lines excited in the plasma, equipped with photomultiplier channels, CCD detector and monochromator
• Luminescence measurement [*²]
  Photoluminescence, electroluminescence, photoluminescence emission for temperature-dependent measurements, He – Ne laser, He – Cd laser, high-resolution monochromators SP2357, SP2558, NIR detectors Ge, InGaAs, CCD
• Linear coating
  Blade coating system for thin polymer films with radiation and convection dryer

• Argon ion beam etching [Access via Institute for Physics, AG Nanostrukturierte Materialien]
  with beam neutralization, substrate rotation and cooling as well as SIMS end point detection
• UHV cluster tool [Access via Institute for Physics, AG Nanostrukturierte Materialien]
  Special system for smaller samples with a total of 4 UHV chambers and central manipulator for combining different materials with:
  pulsed laser deposition for complex oxides with resistance and laser heating (TSST); organic molecular beam epitaxy for max. 4 organic semiconductors with in-situ metallization; Magnetron sputtering chamber for magnetoelectronic applications with a total of 9 magnetrons; Electron beam evaporator with five crucibles (6 kW) and two different evaporation positions for low thermal loads
• Atomic Layer Deposition (Beneq ALD TFS 200) [Access via Institute for Physics, AG Mikrostrukturbasiertes Materialdesign]
  Thermal and plasma-assisted atomic layer deposition for the deposition of ZnO and Al2O3, wafers up to 8"
• PECVD (Oxford PECVD Plasmalab 100) [Access via Fraunhofer CSP]
  Deposition of silicon nitride and oxide, wafers up to 8"
• Glove box [Access via Institute for Physics, AG Nanostrukturierte Materialien/AG Photovoltaik]
  For working with solvents; with a deposition pump stand (Korvus Hex) for thermal vaporization and sputtering inside the box

* in cooperation with the group Photovoltaik of the Institute of Physics
*² in cooperation with the group Nichtlineare Nanophotonik of the Institute of Physics

• Laser interference lithography ( laser: CryLaS 50 mW & 10 mW with λ=266 nm)
  Production of regular nanostructures with periods of 150…700 nm, max. sample size: 50 mm diameter
• Electron beam lithography (Raith Pioneer) [*]
  EBL with field emission cathode and sample table controlled by laser interferometry, primary beam energy: 0.5…30 keV, smallest structure size = 20 nm, field stitching accuracy = 50 nm (mean + 2σ), laser stage travel range 50 mm × 50 mm
• Maskless optical lithography (DMO MicroWriter ML3) [*]
  UV exposure unit with mirror array, 385 nm laser, 150 mm × 150 mm sample size
• Photolithography (SUSS MJB-3 Mask Aligner) [*]
  UV exposure unit with 365 nm illumination, wafer size max. 3", resolution of the exposure 0.8µm, mask alignment:> 0.25 µm
• Nanoimprint lithography (OBDUCAT Nanoimprinter NIL-2,5“)
  Hot embossing max. 250 °C, 70 bar, max. stamp - substrate size 65 mm diameter
• Reactive ion etching / plasma etching (Oxford Plasmalab 100 System) [*²]
  Plasma source RIE/ICP with max. 300 W/5000 W, wafer 4" or 6", two process chambers (F- or Cl-processes),
• Plasma cleaning (Diener Nano)
  Etching, activation and cleaning of surfaces for subsequent processes; process and purging gases: O2, N2, Ar, generator LF 40 kHz with max. 300 W
• Profilometry (Veeco Dektak 150) [*]
  one-dimensional diamond stylus profilometer with TV camera, stylus contact pressure: 1…15 mg, reproducibility: 6 Å (σ @ 100 nm edge), height range: 524 µm, max. scan length: 55 mm
• Wire bonding (tpt HB05) [*]
  Wire bonders with wedge / wedge or ball / wedge bonding for electrical contacting of structured samples
• Light microscopic wafer inspection (Zeiss Axiotron)
  
• thermal or electron beam evaporation
  Electron beam evaporation system MSBA400: 6-fold crucible evaporator 6 kW, evaporator materials Pt, Au, Cr, Ti, Al wafers up to 6", radiation heating up to 350°C;
  Roth & Rau plasma laboratory system PLS 500P: DC sputter magnetron with 4 "target for metal coating in HV, thermal evaporator;
  Sputtering system X320: process space for max. 3" wafers, existing target materials Ni, Fe–Ni alloys, Cu;
  HV-Anlagen B30 HVT Dresden: thermal vapor deposition with Au, Ag, Al, Cr, Ti
• Tempering furnaces
  

* in cooperation with the group Nanostrukturierte Materialien of the Institute of Physics
*² in cooperation with the group Nichtlineare Nanophotonik of the Institute of Physics

• EPOS - ELBE Positron Source (im Aufbau)