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Bereiche im
Nanotechnikum |
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Martin-Luther-Universität
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4, D-06120 Halle, Germany
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 | M. Hanke, C. Eisenschmidt, P. Werner, N. D. Zakharov, R. Syrowatka, F. Heyroth, P. Schäfer, O. Konovalov
Elastic strain relaxation in axial Si/Ge whisker heterostructures
Phys. Rev. B 75 (2007), 161303R |
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M. Schade, F. Heyroth, H. S. Leipner, M. Hanke
Combined HRXRD and EELS investigations of SiGe/Si(001) islands grown by means of liquid phase epitaxy.
Microsc. Microanal. 13 (2007), Suppl. 3 |
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| S. Thraenert, E. M. Hassan, D. Enke, D. Fuerst, R. Krause-Rehberg
Verifying the RTE model: ortho-positronium lifetime measurement on controlled pore glasses.
phys. stat. sol. (c) 4, 10 (2007), 3819-3822 |
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| M. Hanke, T. Boeck, A.-K. Gerlitzke, F. Syrowatka, F. Heyroth
Elastic strain relaxation in discontinuous wetting layers and its impact on lateral ordering of heteroepitaxial dots
Phys. Rev. B 74 (2006), 153304 |
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| T. Höche, R. Böhme, J. W. Gerlach, B. Rauschenbach, F. Syrowatka
Nanoscale laser patterning of thin gold films
Phil. Mag. Lett. 86 (10) (2006), 661-667 |
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| M. Hanke, M. Schmidbauer, D. Grigoriev, P. Sch?fer, R. K?hler, T. H. Metzger, Z. M. Wang, Y. I. Mazur, G. J. Salamo
Zero-strain GaAs quantum dot molecules as investigated by diffuse x-ray scattering
Appl. Phys. Lett. 89 (2006), 053116 |
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| P. Werner, N. D. Zakhaarov, G. Gerth, L. Schubert, U. G?sele
On the formation of Si nanowires by molecular beam epitaxy
Intern. J. Mater. Res. 97, 7 (2006), 1008-1015 |
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| M. Hanke, T. Boeck, A.-K. Gerlitzke
Template-based assembling of SiGe/Si(001) islands by local anodic oxidation
Appl. Phys. Lett. 88 (2006), 173106 |
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| V. V. Mikhnovich
Formation of defects at high temperature plastic deformation of gallium arsenide
Dissertation (2006), |
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| M. Schmidbauer, Sh. Seydmohamadi, D. Grigoriev, Zh.M. Wang, Yu.I. Mazur, P. Sch?fer, M. Hanke, R. K?hler, G.J. Salamo
Controlling planar and vertical ordering in three-dimensional (In,Ga)As quantum dot lattices by GaAs surface orientation
Phys. Rev. Lett. 96 (2006), 066108 |
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