Interdisziplinäres Zentrum für Materialwissenschaften
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      Nanotechnikum
Martin-Luther-Universität
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
Tel.: +49 345 55 28471
Telefax:+49 345 55 27390 email: info@cmat.uni-halle.de
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abstractH.-R. H?che
Wie die Bienen "Werkstoff" sparen...
Scientia halensis 2 (1998), 3-4
 
unfortunately no abstract available Neumann-Zdralek J., Koschel F., R?der A., Abicht H.-P., Engler N., Riemann A.
Nanoscopical phase-analysis of SiC containing BaTiO3-ceramic
Fresenius J. Anal. Chem. 361 (1998), 562-564
 
unfortunately no abstract available S. Gablenz, D. V?ltzke, H.-P. Abicht, J. Neumann-Zdralek
Preparation of fine TiO2 powders via spray hydrolysis of titanium tetraisopropoxide
J. Mater. Sci. Lett. 17, 7 (1998), 537-539
 
unfortunately no abstract available Wellner A., Katzer D., Blumtritt H., R?der A.
High resolution EBIC imaging of shallow p-n junction using FEG-SEM
Proc. GADEST (1998), 442-444
 
abstractR. Krause-Rehberg, H. S. Leipner, T. Abgarjan, A. Polity
Review of defect investigations by means of positron annihilation in II-VI compound semiconductors
Appl. Phys. A 66 (1998), 599-614
 
abstractW. Leitenberger, C. Eisenschmidt, H.-R. H?che
Polarization phenomena in Laue- and Bragg-geometry
Surf. Invest. 12 (1997), 469-480
 
unfortunately no abstract available J. Schreiber, H. Uniewski, S. Hildebrandt, L. H?ring, H. S. Leipner
Distinction of the recombination properties and identification of Y luminescence at glide dislocations in CdTe
Inst. Phys. Conf. Ser. 157 (1997), 651-654
 
unfortunately no abstract available S. Hildebrandt, H. Uniewski, J. Schreiber, H. S. Leipner
Localization of Y luminescence at glide dislocations in cadmium telluride
J. Physique III 7, 7 (1997), 1505-1514
 
abstractH. S. Leipner, R. Scholz, F. Syrowatka, H. Uniewski, J. Schreiber
Interaction of copper with dislocations in GaAs
J. Physique III 7, 7 (1997), 1495-1503
 
abstractR. Krause-Rehberg, H. S. Leipner
Determination of absolute vacancy concentrations in semiconductors by means of positron annihilation
Appl. Phys. A 64 (1997), 457-466
 
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