Interdisziplinäres Zentrum für Materialwissenschaften
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      Nanotechnikum
Martin-Luther-Universität
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
Tel.: +49 345 55 28471
Telefax:+49 345 55 27390 email: info@cmat.uni-halle.de
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abstractG. Dlubek, V. Bondarenko, J. Pionteck, M. Supej, A. Wutzler, R. Krause-Rehberg
Free volume in two differently plasticized poly(vinyl chloride)s: a positron lifetime and PVT study
Polymer 44 (2003), 1921-1926
 
abstractH. Lei, H. S. Leipner, J. Schreiber, J. L. Weyher, T. Wosinski, I. Grzegory
Raman and cathodoluminescence study of dislocations in GaN
J. Appl. Phys. 92, 11 (2002), 6666-6670
 
abstractJ. Gebauer, R. Krause-Rehberg, M. Prokesch, K. Irmscher
Identification and quantitative evaluation of compensating Zn-vacancy-donor complexes in ZnSe by positron annihilation
Phys. Rev. B 66 (2002), 115206
 
abstractR. Krause-Rehberg, F. B?rner, F. Redmann, W. Egger, G. K?gel, P. Sperr, W. Triftsh?user
Improved defect profiling with slow positrons
Appl. Surf. Sci. 194 (2002), 210-213
 
abstractH. Lei, H. S. Leipner, N. Engler, J. Schreiber
Interactions of point defects with dislocations in n-type silicon-doped GaAs
J. Phys. Cond. Mat. 14 (2002), 7963-7971
 
abstractH.-R. H?che, M. Kolbe, Ch. Eisenschmidt
Change of the X-ray polarisation state by diffraction
Cryst. Res. Technol. 37, 7 (2002), 665 - 675
 
abstractM. Kolbe, C. Eisenschmidt, H.-R. H?che
Investigations to study the change of the polarisation state at X-ray diffraction in mosaic crystals
HASYLAB? Annual Report 2001, Pt. 1 (2002), 899-900
 
abstractU. Schmidt, C. Eisenschmidt, M. Wei?, C.Y. Zahra and A.-M. Zahra
Decomposition of La- and Dy-rich amorphous alloys
J. Non-Cryst. Sol. 297, 1 (2002), 1-12
 
abstractM. Ueltzen, I. Martinek, F. Syrowatka, U. Floegel-Delor, T. Riedel
Soldered Ohmic contacts to superconductors for high-current applications
Phys. C 372-376 (2002), 1653-1656
 
abstractH. S. Leipner, D. Lorenz, A. Zeckzer, H. Lei, P. Grau
Nanoindentation pop-in effect in semiconductors
Physica B 308-310, 1-4 (2001), 446-449
 
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