Organisation
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Aktivitäten
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Kontakt |
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Angebote für Studenten |
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Bereiche im Nanotechnikum |
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Martin-Luther-Universität
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4, D-06120 Halle, Germany
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| V. Bondarenko, J. Gebauer, F. Redmann, R. Krause-Rehberg Vacancy formation in GaAs under different equilibrium conditions Mater. Sci. Forum 445-446 (2004), 54-56 |
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| R. Krause-Rehberg, V. Bondarenko, J. P?pping, N. A. Stolwijk, T. E. M. Staab, U. S?dervall Observation of vacancies during Zn diffusion in GaP Mater. Sci. Forum 445-446 (2004), 26-30 |
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| M.Hanke, H.Raidt, R.K?hler, H.Wawra Island chain formation during liquid phase epitaxy of SiGe on silicon Appl. Phys.Lett. 83, 24 (2003), 4927-4929 |
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| Hartmut S. Leipner (Ed.) Innovationsforum Nanostrukturierte Materialien Martin-Luther-Universität Halle-Wittenberg (2003), |
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| H. Lei Effect of point defects and dislocations on electrical and optical properties of III-V semiconductors Dissertation (2003), |
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| D. Böschel, M. Janich, H. Roggendorf Size distribution of colloidal silica in sodium silicate solutions investigated by dynamic light scattering and viscosity measurements J. Colloid Interface Sci. 267, 2 (2003), 360-368 |
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| H. S. Leipner, V. V. Mikhnovich, V. Bondarenko, Z. Wang. H. Gu, R. Krause-Rehberg, J.-L. Demenet, J. Rabier Positron annihilation of defects in silicon deformed at different temperatures Physica B 340-342 (2003), 617-621 |
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| J. Gebauer, M. Lausmann, F. Redmann, R. Krause-Rehberg, H. S. Leipner, E. R. Weber, P. Ebert Determination of the Gibbs free energy of formation of Ga vacancies in GaAs by positron annihilation Phys. Rev. B 67, 23 (2003), 235207 |
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| D. Lorenz, A. Zeckzer, U. Hilpert, P. Grau, H. Johansen, H. S. Leipner Pop-in effect as homogeneous nucleation of dislocations during nanoindentation Virt. J. Nanoscale Sci. Technol. 7, 20 (2003), |
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| D. Lorenz, A. Zeckzer, U. Hilpert, P. Grau, H. Johansen, H. S. Leipner Pop-in effect as homogeneous nucleation of dislocations during nanoindentation Phys. Rev. B 67 (2003), 172101 |
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