We discuss morphological changes of strained SiGe/Si(001) dots grown from an indium solution. In the course of a particular depletion scenario initial, lens-like dots transform into truncated pyramids of four-fold symmetry inside circular rims of rising height and steep inner edge. Further dot nucleation performs close to the rim indicating elastically relaxed lattice sites. The observations made are supported by numerical finite element calculations on the strain energy distribution.