10th International Workshop on Beam Injection Assessment
of Microstructures in Semiconductors - BIAMS
2010

Halle (Saale) / Germany,    July 4 - 8, 2010

  
 
Program::

The BIAMS 2010 conference will consist of invited talks, oral, and poster presentations. The conference will start with the registration and a welcome reception in the Dorint Hotel Charlottenhof on Sunday, July 4, 2010. The conference will be held in the main lecture hall of this hotel, located in the city centre of Halle.




Invited Speakers

D. Cavalcoli (Bologna, Italy)

Surface Photovoltage Spectroscopy of semiconductor nanostructures,

K. Dornich (Freiberg, Germany)

Contactless electrical characterization of semiconductors by microwave-detected-PICTS (MD-PICTS) and -photo-conductivity (MDP),

M. Hytch (Toulouse, France)

Strain assessment in nano regions,

H. Kohl (Münster, Germany)

Chemical mapping in the electron microscope,

R. W. Martin (Strathclyde, UK)

Cathodoluminescence spectral mapping of nanostructures,

M. Rinio (Gelsenkirchen, Germany)

Recombination in ingot cast silicon solar cells,

P. Fernández Sánchez (Madrid, Spain)

Cathodoluminescence of pure and doped ZnO nanostructures,

S. Sekiguchi (Tsukuba, Japan)

Optical and electrical activities of small angle grain boundaries in multicrystalline Si,

T. Trupke (Sydney, Australia)

Luminescence imaging applications in silicon photovoltaics.