10th International Workshop on Beam Injection Assessment
of Microstructures in Semiconductors - BIAMS
2010

Halle (Saale) / Germany,    July 4 - 8, 2010

  
 
Purposes::

The conference will be organized in sections with key lectures given by a limited number of invited speakers on topics of relevant scientific and technological interest. Poster sessions will also be held during the conference.

The official language of the conference will be English.


The following main topics include, but are not limited to:

Semiconductor characterization methods
  • Electron beam characterization methods: cathodoluminescence, EBIC, TEM, STEM, EBSD, ...
  • Light characterization methods: spatially resolved PL, microRaman, OBIC, ...
  • Scanning Probe Microscopy: STM, AFM and SNOM techniques
  • Ion beams
  • Other microscopy characterization techniques
Application of these and related techniques to the study of
  • Photovoltaic materials and devices (Special Topic)
  • Point and extended defects, impurities, interfaces ...
  • Heterostructures, quantum structures, devices ...
  • Nanostructures, nanowires ...
  • Optical and electronic properties of defects, microstructures and nanostructures and in general any quantitative and analytical aspect of local beam injection assessment of any semiconductor material.