Organisation
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Aktivitäten
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Kontakt |
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Angebote für Studenten |
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Bereiche im Nanotechnikum |
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Martin-Luther-Universität
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4, D-06120 Halle, Germany
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S. Gablenz, D. V?ltzke, H.-P. Abicht, J. Neumann-Zdralek Preparation of fine TiO2 powders via spray hydrolysis of titanium tetraisopropoxide J. Mater. Sci. Lett. 17, 7 (1998), 537-539 |
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Wellner A., Katzer D., Blumtritt H., R?der A. High resolution EBIC imaging of shallow p-n junction using FEG-SEM Proc. GADEST (1998), 442-444 |
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| R. Krause-Rehberg, H. S. Leipner, T. Abgarjan, A. Polity Review of defect investigations by means of positron annihilation in II-VI compound semiconductors Appl. Phys. A 66 (1998), 599-614 |
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| W. Leitenberger, C. Eisenschmidt, H.-R. H?che Polarization phenomena in Laue- and Bragg-geometry Surf. Invest. 12 (1997), 469-480 |
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J. Schreiber, H. Uniewski, S. Hildebrandt, L. H?ring, H. S. Leipner Distinction of the recombination properties and identification of Y luminescence at glide dislocations in CdTe Inst. Phys. Conf. Ser. 157 (1997), 651-654 |
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S. Hildebrandt, H. Uniewski, J. Schreiber, H. S. Leipner Localization of Y luminescence at glide dislocations in cadmium telluride J. Physique III 7, 7 (1997), 1505-1514 |
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| H. S. Leipner, R. Scholz, F. Syrowatka, H. Uniewski, J. Schreiber Interaction of copper with dislocations in GaAs J. Physique III 7, 7 (1997), 1495-1503 |
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| R. Krause-Rehberg, H. S. Leipner Determination of absolute vacancy concentrations in semiconductors by means of positron annihilation Appl. Phys. A 64 (1997), 457-466 |
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H. S. Leipner, C. H?bner, R. Krause-Rehberg Study of plastically deformed semiconductors by means of positron annihilation Mater. Sci. Forum 258-263 (1997), 981-986 |
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Abicht H.-P., V?ltzke D., R?der A., Schneider R., Woltersdorf J. The influence of the milling liquid on the properties of barium titanate ceramics J. Mat. Chem. 7(3) (1997), 487-492 |
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