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Bereiche im
Nanotechnikum |
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Martin-Luther-Universität
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4, D-06120 Halle, Germany
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 | J. Schreiber, L. H?ring, H. Uniewski, S. Hildebrandt, H. S. Leipner
Recognition and distribution of A(g) and B(g) dislocations in indentation zones on {111} and {110} surfaces of CdTe
phys. stat. sol. (a) 171 (1999), 89-97 |
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| F. Heyroth, C. Eisenschmidt, H.-R. H?che
X-ray topography of perfect crystals using the Laue-Laue three-beam case of diffraction
Cryst. Res. Technol. 33 (1998), 547-554 |
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R. Krause-Rehberg, H. S. Leipner, A. Polity, F. Rudolf, R. Hammer, M. Jurisch
Mechanical damage in GaAs wafers introduced by a diamond saw: A study by means of positron annihilation and electron microscopy
phys. stat. sol. (a) 158,2 (1998), 377-383 |
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| C. Medrano, F. Heyroth, M. Schlenker, J. Baruchel and J.Espeso
Two- and Three-Beam X-ray Diffraction Imaging of Domains in Magnetite
J. Appl. Cryst. 31 (1998), 726-732 |
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| S. Hildebrandt, J. Schreiber, W. Hergert, H. Uniewski, H. S. Leipner
Theoretical fundamentals and experimental materials and defect studies using quantitative scanning electron microscopy-cathodoluminescence/electron beam induced current on compound semiconductors
Scanning Microsc. Intern. 12, 4 (1998), 535-552 |
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| H.-R. H?che
Wie die Bienen "Werkstoff" sparen...
Scientia halensis 2 (1998), 3-4 |
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Neumann-Zdralek J., Koschel F., R?der A., Abicht H.-P., Engler N., Riemann A.
Nanoscopical phase-analysis of SiC containing BaTiO3-ceramic
Fresenius J. Anal. Chem. 361 (1998), 562-564 |
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S. Gablenz, D. V?ltzke, H.-P. Abicht, J. Neumann-Zdralek
Preparation of fine TiO2 powders via spray hydrolysis of titanium tetraisopropoxide
J. Mater. Sci. Lett. 17, 7 (1998), 537-539 |
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Wellner A., Katzer D., Blumtritt H., R?der A.
High resolution EBIC imaging of shallow p-n junction using FEG-SEM
Proc. GADEST (1998), 442-444 |
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| R. Krause-Rehberg, H. S. Leipner, T. Abgarjan, A. Polity
Review of defect investigations by means of positron annihilation in II-VI compound semiconductors
Appl. Phys. A 66 (1998), 599-614 |
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