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Bereiche im
Nanotechnikum |
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Martin-Luther-Universität
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4, D-06120 Halle, Germany
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10 | 20 | 30 | 40 | 50 | 60 | 70 | 80 | 90 | 100 | 110 | 120 | 130 | 140 | 150 | 160 |170 | 180 | 190 | 200 | 210 | 220 | 230 | 240 | 250 | 260 | 270 | 280 | 290 | 300 | 306 | All
 | M. Hanke, C. Eisenschmidt, P. Werner, N. D. Zakharov, R. Syrowatka, F. Heyroth, P. Schäfer, O. Konovalov
Elastic strain relaxation in axial Si/Ge whisker heterostructures
Phys. Rev. B 75 (2007), 161303R |
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M. Schade, F. Heyroth, H. S. Leipner, M. Hanke
Combined HRXRD and EELS investigations of SiGe/Si(001) islands grown by means of liquid phase epitaxy.
Microsc. Microanal. 13 (2007), Suppl. 3 |
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| S. Thraenert, E. M. Hassan, D. Enke, D. Fuerst, R. Krause-Rehberg
Verifying the RTE model: ortho-positronium lifetime measurement on controlled pore glasses.
phys. stat. sol. (c) 4, 10 (2007), 3819-3822 |
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| M. Hanke, T. Boeck, A.-K. Gerlitzke, F. Syrowatka, F. Heyroth
Elastic strain relaxation in discontinuous wetting layers and its impact on lateral ordering of heteroepitaxial dots
Phys. Rev. B 74 (2006), 153304 |
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| T. Höche, R. Böhme, J. W. Gerlach, B. Rauschenbach, F. Syrowatka
Nanoscale laser patterning of thin gold films
Phil. Mag. Lett. 86 (10) (2006), 661-667 |
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| P. Werner, N. D. Zakhaarov, G. Gerth, L. Schubert, U. G?sele
On the formation of Si nanowires by molecular beam epitaxy
Intern. J. Mater. Res. 97, 7 (2006), 1008-1015 |
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| V. V. Mikhnovich
Formation of defects at high temperature plastic deformation of gallium arsenide
Dissertation (2006), |
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| J. Zhang, F. Paumier, T. H?che, F. Heyroth, F. Syrowatka,
R. J. Gaboriaud, H. S. Leipner
Electron energy-loss spectroscopy investigations of Y2O3 films on Si (001) substrate
Thin Sol. Films 496 (2006), 266-272 |
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| H. J. Fan, B. Fuhrmann, R. Scholz, F. Syrowatka, A. Dadgar, A. Krost, M. Zacharias
Well-ordered ZnO nanowire arrays on GaN substrate fabricated via nanosphere lithography
J. Cryst. Growth 287 (2006), 34-38 |
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| N. D. Zakharov, P. Werner, G. Gerth, L. Schubert, L. Sokolov, U. G?sele
Growth phenomena of Si and Si/Ge nanowires on Si (111) by molecular beam epitaxy
J. Cryst. Growth 290 (2006), 6-10 |
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