Interdisziplinäres Zentrum für Materialwissenschaften
  Publications [search]   
Offers for students
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
Phone: +49 345 55 28471
Telefax:+49 345 55 27390 e-mail:
[Papers] [Theses] [Reports] [Posters]

H. Lei, H. S. Leipner, N. Engler, J. Schreiber
Interactions of point defects with dislocations in n-type silicon-doped GaAs
J. Phys. Cond. Mat. 14 (2002), 7963-7971

Raman scattering and cathodoluminescence experiments have been performed to investigate the effect of dislocations on the spatial distribution of point defects and on the free electron concentration in n-type GaAs:Si. An experimentally extended increase of the free electron and (SiGaVGa)2- complex concentrations from the matrix to the dislocation is explained as resulting from the formation of arsenic precipitates around the dislocation by means of computer simulations based on a diffusion-aggregation model.
View/download pdf file

Impressum Copyright © Center of Materials Science, Halle, Germany. All rights reserved.