Interdisziplinäres Zentrum für Materialwissenschaften
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Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
Phone: +49 345 55 28471
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K. Petters, J. Gebauer, F. Redmann, H. S. Leipner, R. Krause-Rehberg
Formation of vacancy clusters during copper diffusion in semiinsulating GaAs
Mater. Sci. Forum 363-365 (2001), 111-113

Undoped GaAs was enriched with copper and studied by means of positron annihilation after quenching. Vacancies and small vacancy clusters (taudef < 350 ps) were registered by positron lifetime spectroscopy if copper diffuses out after annealing. Doppler coincidence spectroscopy reveals that the vacancies and the vacancy clusters are decorated with copper atoms. Number and size of these microvoids depend on the initial copper concentration.

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