Interdisziplinäres Zentrum für Materialwissenschaften
  Publications [search]   
Offers for students
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
Phone: +49 345 55 28471
Telefax:+49 345 55 27390 e-mail:
[Papers] [Theses] [Reports] [Posters]

V. G. Talalaev, B. V. Novikov, G. E. Cirlin, H. S. Leipner
Temperature quenching of spontaneous emission in tunnel injection nanostructures.
Fiz. Techn. Poluprov. 49, 11 (2015), 1531-1539

The spontaneous emission spectra are measured in near IR range 0.8-1.3 micrometer from inverted tunnel injection nanos- tructures (ITINS), containing a layer of InGaAs quantum dots and a layer of InGaAs quantum well, separated by GaAs barrier spacer with different thickness (3-9nm). The temperature dependence (5-295K) of such emission both under optical excitation (photoluminescence) and by injection in p-n-junction (electroluminescence) is investigated. It is shown, that the current pumping at room temperature is most efficient for ITINS with thin barrier (less than 6 nm), when the quantum dot apexes are connected with quantum well by the narrow InGaAs straps (nanobridges). In this case, the electroluminescence quenching by the warming from 5K up to 295K is insignificant. A quenching factor ST of integrated intensity I comes to ST = I5/I295 ca. 3. The extended Arrhenius analysis is used to discuss the processes, which lead to the temperature stability of emission from ITINS.

Keywords: tunneling, devices, quantum dots, quantum wells, photoluminescence, electroluminescence

Impressum Copyright © Center of Materials Science, Halle, Germany. All rights reserved.