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Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
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Robert Göckeritz, Nico Homonnay, Alexander Müller, Tim Richter, Bodo Fuhrmann, Georg Schmidt
Nanosized perpendicular organic spin-valves.
Appl. Phys. Lett. 116, 10 (2015), 102403

A fabrication process for perpendicular organic spin-valve devices based on the organic semiconductor Alq3 has been developed which offers the possibility to achieve active device areas of less than 500 × 500?nm2 and is flexible in terms of material choice for the active layers. Characterization of the resulting devices shows a large magnetoresistance of sometimes more than 100%, however with equally large variation from device to device. Comparison with large area spin-valves indicates that the magnetoresistance of both large and small devices most likely originates from tunneling through pinholes and tunneling magnetoresistance.

Keywords: spintronics; preparation; devices; electrical properties

DOI 10.1063/1.4914830
© AIP 2015

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