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Martin-Luther-University
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
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A. A. Tonkikh, N. D. Zakharov, C. Eisenschmidt, H. S. Leipner, P. Werner
Aperiodic SiSn/Si Multilayers for Thermoelectric Applications.
J. Cryst. Growth 392 (2014), 49-51
We report on novel defect-free SiSn/Si heterostructures grown pseudomorphically on Si(001) substrates using temperature-modulated molecular beam epitaxy. This approach results in a sustainable epitaxial growth for SiSn/Si multilayers. Transmission electron microscopy and electron diffraction manifest that the SiSn layers possess a diamond lattice structure. X-ray diffraction reveals up to 9.5 at.% Sn in the crystal lattice of the SiSn layers.
Keywords: composition; epilayers; growth; SiGe; thermoelectrics; transmission electron microscopy; X-ray diffraction
DOI 10.1016/j.jcrysgro.2014.01.047
© Elsevier 2014
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