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Interdisziplinäres Zentrum für Materialwissenschaften
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J. Schilling, V. Talalaev, A. Tonkikh, B. Fuhrmann, F. Heyroth, M. Otto
Enhanced non-radiative recombination in the vicinity of plasma-etched side walls of luminescing Si/Ge-quantum dot structures.
J. Appl. Phys. 103, 16 (2013), 161106

The photoluminescence from plasma etched, wedge shaped Ge-quantum dot arrays is investigated locally. The wedge geometry allows a convenient measurement of the luminescence intensity within a well defined distance from the etched side facets. A zone of reduced photoluminescence with a thickness of several hundred nanometers is detected adjacent to the etched facets due to the strong non-radiative surface recombination. Covering the surface with thin layers of aluminium oxide passivates part of the surface states leading to a reduction of the luminescence quenching zone.

Keywords: recombination; quantum dots; SiGe; photoluminescence; passivation

DOI 10.1063/1.4825149
© AIP 2013

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