Using glancing angle deposition (GLAD) by ion beam sputtering of Si on differently patterned substrates, periodically arranged Si nanostructures were obtained. Patterns with tetragonal, honeycomb-like, and hexagonally closed packed (hcp) arrangement of the artificial seeds for the subsequent deposition at oblique particle incidence were used to demonstrate the influence of the pattern periodicity, the inter-seed distances, and other deposition parameters on the growth and morphological evolution of the Si nanostructures.