Interdisziplinäres Zentrum für Materialwissenschaften
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Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
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M. Hanke, M. Schmidbauer, D. Grigoriev, P. Sch?fer, R. K?hler, T. H. Metzger, Z. M. Wang, Y. I. Mazur, G. J. Salamo
Zero-strain GaAs quantum dot molecules as investigated by diffuse x-ray scattering
Appl. Phys. Lett. 89 (2006), 053116

The authors report on x-ray diffuse scattering at nominally strain-free GaAs(001) quantum dot molecules (QDMs). Al0.3Ga0.7As deposited by molecular beam epitaxy on GaAs(001) acts as barrier layer between the GaAs(001) substrate and subsequently grown QDMs; the adjusted thickness of 50 nm preserves the in-plane lattice parameter. Pairs of lenselike quantum dots are created with preferential orientation along [1-10] placed on shallow hills. Grazing incidence diffraction along with kinematical scattering simulations indicate completely strain-free QDs which prove a strongly suppressed intermixing between QDMs and the underlying AlGaAs barrier layer.

Keywords: diffuse x-ray scattering, quantum dot molecules, GaAs

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