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Martin-Luther-University
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
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V. Bondarenko, J. Gebauer, F. Redmann, R. Krause-Rehberg Vacancy formation in GaAs under different equilibrium conditions Mater. Sci. Forum 445-446 (2004), 54-56
Defect properties of undoped semi-insulating and silicondoped n-type GaAs annealed at different arsenic vapor pressures have been studied by means of positron annihilation and Hall measurements... Keywords: positron annihilation, vacancies, density, stoichiometry, gallium arsenide View / Download
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