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Martin-Luther-University
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
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N. Yu. Arutyunov, R. Krause-Rehberg Atomic environment of positrons annihilating in different parts of Cz-Si single crystal Solid State Phen. 95-96 (2004), 507-512
The distribution of the positron-sensitive oxygen-induced as-grown point defects has been studied along the axis of growth of the single crystal Cz-Si and along the radial direction at the central part of the ingot... Keywords: positron annihilation, silicon, growth, oxygen, complexes View / Download
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