|Venue and time: Institut für Physik, von-Danckelmann-Platz 3
Room 3.16, mondays 16:00
The presence of nanosize defect structures (lattice imperfections) as perturbations of the ideal lattice periodicity determines essential physical properties of crystals. A survey is given on zero to three dimensional crystal defects: Point defects, dislocations, stacking faults, grain boundaries, and precipitates. An introduction is given for the basic features of these defects in conjunction with phenomena like material transport in the lattice, growth of crystals, and plasticity.
Important properties of crystalline materials, such as crystal growth from the point of view of crystal imperfections, diffusion in solids, and the role of defects in the manufacturing and in the function of solid state devices are discussed. Basic experimental techniques of the investigation of defects are introduced. The following methods are treated: optical and electrical methods (luminescence, Hall effect, deep level transient spectroscopy, X-ray diffraction, probe and resonance techniques (positron annihilation, perturbed angular correlation, electron paramagnetic resonance). The pieces of information to be extracted from the particular methods for thecharacterization of the defect structure are presented..
|I Defects in crystals
| II Structure of imperfect materials
| III Methods
|Crystal structures*||Introduction into crystal growth|
|Introduction into point defects|
|Point defects in semiconductors/Defect chemistry|
|Elasticity theory of dislocations|
* File updated in 2016.
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