Figure 1: Scheme of combined SEM-CL/EBIC experiments

Figure 2: Schematic configuration of CL/EBIC contrast measurements at a surface-parallel dislocation

  Figure 3: (a) Calculated CL contrast from a surface-parallel dislocation for various depths zD (L = 1 m,  = 0.75 m-1,   = 0.01 r = 0). For zD = 1 m, Schottky and p-n EBIC contrasts are also shown. (b) Corresponding contrast profiles at zD = 1 m. The inset shows CL/EBIC profile half-widths as a function of Ub and zD

Figure 4: CL contrast profile function and half-width for varying L ( = 0.75 m-1,  , rD = 0.1 m, r = 0, zD = 1 m, Ub = 20 kV). Both cCL* ~ c for constant  = 0.01 and cCL*/L2 ~ c for constant  = 1 are shown

Figure 5 (after [62]): CL contrast for varying recombination strength (L = 1 m,  = 0.75 m-1, S  , rD = 0.1 m, r = 0, zD = 1 m, Ub = 20 kV) (a) analytical approximation [62], (b) series expansion [45], (c) rotation-symmetric solution [14]

Figure 6: Numerically calculated excess carrier density q(0,y,z) for various defect strengths of a surface-parallel line defect (position denoted by arrows) in a 5 m thick layer (L = 3 m, S  , zD = 1.43 m, Ub = 20 kV,  = 2.9 m)

  Figure 7 (after [29]): (a) Experimental and fitted spectral CL signal (Ub Ib = 20 W) from p-GaAs (L = 4.5 m, zT = 0.07 m, S  ), (b) Fit results. Top: Absorption coefficient compared with [6], bottom: Internal spectral distribution and measured CL spectra at Ub = 10 kV and 50 kV. Arrows denote the spectral maximum positions

Figure 8 (after [61]): Experimental EBIC contrast profiles and best fits for a surface-parallel dislocation in p-GaAs ( = 0.89, zD = 1.43 m, L = 3.0 m). The inset shows the experimental and fitted EBIC and CL maximum contrast (CL = 0.73)

Figure 9: Experimental and fitted CL contrast from a screw type glide dislocation in n-GaAs:Si (fit parameters:  = 0.95, zD = 1.58 m, L = 0.73 m,  = 1.30 m-1, zT = 0.03 m, S  ) and a misfit dislocation in n-GaAs0.62P0.38:Te ( = 1.78, zD = 0.77 m, L = 0.90 m,  = 1.08 m-1, zT = 0.12 m, S  )

   Figure 10: (a) Temperature dependence of the CL contrast of a surface-parallel misfit dislocation and the matrix CL intensity in n-GaP (Ub = 20 kV), (b) Defect and bulk lifetimes as a function of temperature

Figure 11: Temperature dependence of CL contrast and profile half-width from a threading glide dislocation in n-GaAs (Ub = 20 kV)

Table 1: Strategy of SEM/CL-EBIC investigations in semiconductors

Table 2: Defect strength of dislocations in semiconductors