Organisation
|
|
|
|
|
Aktivitäten
|
|
|
|
|
|
|
|
|
|
|
Kontakt |
|
|
|
|
|
|
Angebote für Studenten |
|
|
|
|
Bereiche im Nanotechnikum |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Martin-Luther-Universität
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4, D-06120 Halle, Germany
|
|
H. Lei, H. S. Leipner, V. Bondarenko, J. Schreiber Identification of the 0.95 eV luminescence band in n-type GaAs:Si J. Phys. Cond. Mat. 16 (2004), S279-285
The luminescence band at 0.95 eV has been identified as originating from the transition within (SiGaVGaSiGa) complexes by comparing cathodoluminescence and positron annihilation spectra. The upper and lower energy levels of the molecule-like defect complexes are suggested to lie at 22 meV below the conduction band and at about 0.5 eV above the valence band, respectively. © Institute of Physics Publishing Keywords: dislocations; cathodoluminescence; vacancies; complexes; gallium arsenide; positron annihilation; energy levels View/download
|
|
|
|