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Bereiche im Nanotechnikum |
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Martin-Luther-Universität
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4, D-06120 Halle, Germany
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M.Hanke, M.Schmidbauer, R.K?hler Lateral correlation of SiGe Stranski-Krastanov islands on silicon as probed by high resolution x-ray diffraction J. Appl. Phys. 96 (2004), 1959-1962
We describe a procedure to consider the impact of lateral positional correlation of SiGe nanoscale
islands onto the diffuse scattering within a high resolution x-ray diffraction experiment. The samples
have been grown by means of liquid phase epitaxy which provides monodisperse island ensembles
containing up to 10E-9 equivalent objects. It is shown that a proper numerical simulation of the x-ray
diffuse scattering pattern requires careful consideration of the partial coherence of x rays. An
appropriate numerical procedure consists of coherent summation over sample areas with lateral
dimensions as given by the coherence properties of the radiation and subsequent incoherent
summation over a large enough number of such areas. For the given case an effective lateral
coherence length of approximately 10E-6 m has been used, which is derived taking into account also the detector resolution. The according simulation is in good agreement with the experimentally observed x-ray diffuse intensity pattern. Keywords: SiGe, Stranski-Krastanov, lateral correlation, x-ray scattering
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