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Bereiche im Nanotechnikum |
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Martin-Luther-Universität
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4, D-06120 Halle, Germany
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M.Hanke, M.Schmidbauer, R.K?hler, F.Syrowatka, A.-K.Gerlitzke, T.Boeck Equilibrium shape of SiGe Stranski-Krastanow islands on silicon grown by liquid phase epitaxy Appl. Phys. Lett. 84 (2004), 5228-5230
SiGe Stranski-Krastanow islands coherently grown on Si(001) substrates by liquid phase epitaxy
are typically made of truncated pyramids with {111} side facets, whereas the persistent presence of
an (001) top facet indicates an energetical disadvantage of complete pyramids compared to
truncated ones.We attribute this to a surface minimization process during the island evolution under the assumption of isotropically distributed surface energies and stable island facets. For the presence of {111} side facets we have theoretically derived a final geometrical aspect ratio of island base
versus island height of 1.96, which is in excellent agreement with the experimentally derived
averaged value of (2.08 +/- 0.10) within a concentration window between 9% and 30% germanium. Keywords: SiGe, Stranski-Krastanov, equilibrium shape
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